⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL26918557 | 0.77 | — | — | |
| SCHEMBL26918129 | 0.73 | — | — | |
| SCHEMBL423743 | 0.71 | — | — | |
| SCHEMBL5166898 | 0.71 | — | — | |
| SCHEMBL6721282 | 0.71 | — | — | |
| SCHEMBL3964239 | 0.69 | — | — | |
| SCHEMBL9958820 | 0.69 | — | — | |
| SCHEMBL19133535 | 0.69 | — | — | |
| SCHEMBL28071891 | 0.67 | — | — | |
| SCHEMBL8759379 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11955341-B2 | Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device | VERSUM MATERIALS US, LLC (US) | 2024-04-09 | — | — | US | claimed |
| CN-113557287-B | Etching solution and method for selectively removing silicon nitride in semiconductor device manufacturing process | 弗萨姆材料美国有限责任公司 | 2023-03-24 | — | — | CN | claimed |
| US-20220157613-A1 | Etching Solution And Method For Selectively Removing Silicon Nitride During Manufacture Of A Semiconductor Device | VERSUM MATERIALS US, LLC (US) | 2022-05-19 | — | — | US | claimed |
| EP-3938465-A1 | ETCHING SOLUTION AND METHOD FOR SELECTIVELY REMOVING SILICON NITRIDE DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | Versum Materials US, LLC (US) | 2022-01-19 | — | — | EP | claimed |
| CN-113557287-A | Etching solution and method for selectively removing silicon nitride in semiconductor device manufacturing process | 弗萨姆材料美国有限责任公司 | 2021-10-26 | — | — | CN | claimed |
| WO-2020185762-A1 | ETCHING SOLUTION AND METHOD FOR SELECTIVELY REMOVING SILICON NITRIDE DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | VERSUM MATERIALS US, LLC (US) | 2020-09-17 | — | — | WO | claimed |
| EP-2993687-B1 | METHOD FOR PROVIDING PORE SEALING LAYER ON POROUS LOW DIELECTRIC CONSTANT FILMS | VERSUM MAT US LLC (US) | 2020-02-05 | — | — | EP | claimed |
| EP-2993687-A1 | METHOD AND COMPOSITION FOR PROVIDING PORE SEALING LAYER ON POROUS LOW DIELECTRIC CONSTANT FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-03-09 | — | — | EP | claimed |
| US-20160049293-A1 | METHOD AND COMPOSITION FOR PROVIDING PORE SEALING LAYER ON POROUS LOW DIELECTRIC CONSTANT FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-02-18 | — | — | US | claimed |
| EP-3938465-B1 | ETCHING SOLUTION AND METHOD FOR SELECTIVELY REMOVING SILICON NITRIDE DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | VERSUM MAT US LLC (US) | 2025-07-09 | — | — | EP | disclosed |
| CN-120040771-A | Hafnium hybridization carbon-rich polysiloxane flexible ablation material, preparation method and application thereof | 四川大学 | 2025-05-27 | — | — | CN | disclosed |
| US-12241010-B2 | Perovskite color converter and method of manufacturing the same | SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (KR) | 2025-03-04 | — | — | US | disclosed |
| US-11955341-B2 | Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device | VERSUM MATERIALS US, LLC (US) | 2024-04-09 | — | — | US | disclosed |
| CN-113557287-B | Etching solution and method for selectively removing silicon nitride in semiconductor device manufacturing process | 弗萨姆材料美国有限责任公司 | 2023-03-24 | — | — | CN | disclosed |
| US-7939614-B2 | Silicon-containing curing composition and heat cured product thereof | ADEKA CORPORATION (JP) | 2011-05-10 | — | — | US | disclosed |
| US-7772594-B2 | covered with a synthetic high molecular compound which is a silicon-containing curable polymer composition having excellent heat resistance and flexibility; high voltage; fluorine-free; platinum curing catalyst | THE KANSAI ELECTRIC POWER CO., INC. (JP) | 2010-08-10 | — | — | US | disclosed |
| US-20080210948-A1 | High-Heat-Resistive Semiconductor Device | THE KANSAI ELECTRIC POWER CO., INC. (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20070197755-A1 | Silicon-containing curing composition and heat cured product thereof | ADEKA CORPORATION (JP) | 2007-08-23 | — | — | US | disclosed |
| EP-1801871-A1 | SEMICONDUCTOR DEVICE | THE KANSAI ELECTRIC POWER CO., INC. (JP) | 2007-06-27 | — | — | EP | disclosed |
| EP-1746132-A1 | SILICON-CONTAINING CURABLE COMPOSITION AND CURED OBJECT OBTAINED BY THERMALLY CURING THE SAME | Adeka Corporation (JP) | 2007-01-24 | — | — | EP | disclosed |