Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPK1 | P28482 | 6/20 | 0.43 |
| ▸ | SMN1; SMN2 | Q16637 | 5/20 | 0.43 |
| ▸ | NPSR1 | Q6W5P4 | 5/20 | 0.43 |
| ▸ | MEN1 | O00255 | 4/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.43 |
| ▸ | RAB9A | P51151 | 4/20 | 0.42 |
| ▸ | NPC1 | O15118 | 3/20 | 0.42 |
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | CASP3 | P42574 | 1/20 | 0.42 |
| ▸ | ATM | Q13315 | 1/20 | 0.42 |
| ▸ | SENP8 | Q96LD8 | 1/20 | 0.42 |
| ▸ | SENP7 | Q9BQF6 | 1/20 | 0.42 |
| ▸ | SENP6 | Q9GZR1 | 1/20 | 0.42 |
| ▸ | MAPT | P10636 | 5/20 | 0.40 |
| ▸ | HTT | P42858 | 3/20 | 0.40 |
| ▸ | UBE2N | P61088 | 2/20 | 0.40 |
| ▸ | GLA | P06280 | 1/20 | 0.40 |
| ▸ | MITF | O75030 | 1/20 | 0.40 |
| ▸ | RAD52 | P43351 | 2/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL778350 | 0.79 | MAPK1 (0.47) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A | |
| SCHEMBL29630093 | 0.79 | MAPK1 (0.47) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A | |
| SCHEMBL11149850 | 0.79 | MAPK1 (0.40) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A | |
| SCHEMBL5551931 | 0.78 | MAPK1 (0.55) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A | |
| SCHEMBL27964956 | 0.77 | MEN1 (0.35) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A | |
| SCHEMBL8678580 | 0.75 | MAPK1 (0.52) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A | |
| SCHEMBL80891 | 0.74 | MAPK1 (0.48) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A | |
| SCHEMBL9353500 | 0.74 | MAPK1 (0.44) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A | |
| SCHEMBL29481306 | 0.74 | MAPK1 (0.48) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A | |
| SCHEMBL8189951 | 0.74 | MAPK1 (0.44) | MAPK1SMN1; SMN2NPSR1MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| EP-1367439-B1 | Radiation-sensitive composition | FUJIFILM CORP (JP) | 2012-08-01 | — | — | EP | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| EP-2399168-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM Corporation (JP) | 2011-12-28 | — | — | EP | disclosed |
| WO-2010150917-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-12-29 | — | — | WO | disclosed |
| EP-1467251-B1 | Positive resist composition | FUJIFILM CORP (JP) | 2010-09-08 | — | — | EP | disclosed |
| EP-1465010-B1 | Positive resist composition | FUJIFILM CORP (JP) | 2009-10-21 | — | — | EP | disclosed |
| US-20080096130-A1 | POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION | 2008-04-24 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-7250246-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-07-31 | — | — | US | disclosed |
| US-6743565-B2 | POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR | FUJI PHOTO FILM CO., LTD. (JP) | 2004-06-01 | — | — | US | disclosed |
| US-6727033-B2 | A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN | FUJI PHOTO FILM CO., LTD. (JP) | 2004-04-27 | — | — | US | disclosed |
| US-20040033437-A1 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. | 2004-02-19 | — | — | US | disclosed |
| US-6692883-B2 | GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER | FUJI PHOTO FILM CO., LTD. (JP) | 2004-02-17 | — | — | US | disclosed |
| EP-1367439-A1 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2003-12-03 | — | — | EP | disclosed |
| US-6630280-B1 | Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness | FUJI PHOTO FILM CO., LTD. (JP) | 2003-10-07 | — | — | US | disclosed |
| US-20030134221-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-07-17 | — | — | US | disclosed |
| US-20030108811-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-06-12 | — | — | US | disclosed |
| US-20020012866-A1 | Positive photoresist composition | FUJIFILM CORPORATION (JP) | 2002-01-31 | — | — | US | disclosed |
| US-6207343-B1 | RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION | FUJI PHOTO FILM CO., LTD. (JP) | 2001-03-27 | — | — | US | disclosed |