SCHEMBL677499

SCHEMBL677499

C[CH]c1ccc(OC2CCCCCCC2)cc1

nearest known ligand 0.53

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
HPGD P15428 1/20 0.53
CHRNB4 P30926 6/20 0.44
CHRNA3 P32297 6/20 0.44
CHRNA7 P36544 6/20 0.44
CHRNA10 Q9GZZ6 5/20 0.44
CHRNA9 Q9UGM1 5/20 0.44
CHRNB2 P17787 5/20 0.44
CHRNA4 P43681 5/20 0.44
PARP10 Q53GL7 1/20 0.43
PTPN1 P18031 1/20 0.43
ALDH1A1 P00352 2/20 0.41
TSHR P16473 1/20 0.41
GRM2 Q14416 1/20 0.40
HRH3 Q9Y5N1 1/20 0.40
FFAR1 O14842 1/20 0.39
ALOX12 P18054 1/20 0.39
EPHX2 P34913 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL677083 1.00 HPGD (0.53) HPGDCHRNB4CHRNA3CHRNA7CHRNA10
SCHEMBL2922605 1.00 HPGD (0.53) HPGDCHRNB4CHRNA3CHRNA7CHRNA10
SCHEMBL677293 0.98 HPGD (0.50) HPGDCHRNB4CHRNA3CHRNA7CHRNA10
SCHEMBL20024717 0.84 HPGD (0.55) HPGDCHRNB4CHRNA3CHRNA7CHRNA10
SCHEMBL2242868 0.83 PARP10 (0.55) HPGDPARP10ALDH1A1TSHRGRM2
SCHEMBL29253344 0.83 TSHR (0.52) HPGDCHRNB4CHRNA3CHRNA7CHRNA10
SCHEMBL5036800 0.81 HPGD (0.53) HPGDCHRNB4CHRNA3CHRNA7CHRNA10
SCHEMBL4058730 0.81 HPGD (0.56) HPGDCHRNB4CHRNA3CHRNA7CHRNA10
SCHEMBL9831975 0.81 HPGD (0.53) HPGDCHRNB4CHRNA3CHRNA7CHRNA10
SCHEMBL510687 0.81 HPGD (0.56) HPGDCHRNB4CHRNA3CHRNA7CHRNA10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 EP disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
EP-2399168-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM Corporation (JP) 2011-12-28 EP disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 EP disclosed
EP-1465010-B1 Positive resist composition FUJIFILM CORP (JP) 2009-10-21 EP disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
EP-1465010-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2004-10-06 EP disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 US disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-20040033437-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2004-02-19 US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed