SCHEMBL6810095

SCHEMBL6810095

[Al+3].[Al+3].[B].[B].[O-2].[O-2].[O-2].[Pb].[Pb].[Si].[Si]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8969624 0.89
SCHEMBL9445662 0.78
SCHEMBL5051382 0.78
SCHEMBL3370957 0.78
SCHEMBL8629754 0.78
SCHEMBL11624191 0.78
SCHEMBL144868 0.78
SCHEMBL640748 0.78
SCHEMBL926745 0.67
SCHEMBL5586426 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6728092-B2 Formation of thin film capacitors SHIPLEY-COMPANY, L.L.C. 2004-04-27 US disclosed
US-20020145845-A1 Formation of thin film capacitors MICROCOATING TECHNOLOGIES OF (US) 2002-10-10 US disclosed
US-6433993-B1 MULTILAYER; FLEXIBLE METAL LAYER, DIELECTRICS, BARRIER; COMBUSTION VAPOR DEPOSITION MICROCOATING TECHNOLOGIES, INC. 2002-08-13 US disclosed
US-6270835-B1 PROVIDING THREE-LAYER STRUCTURE COMPRISING DIELECTRIC LAYER AND ELECTRICALLY CONDUCTIVE LAYERS; PATTERNING ELECTRICALLY CONDUCTIVE LAYER TO FORM STRUCTURE; EMBEDDING INTO SECOND DIELECTRIC MATERIAL; PATTERNING ELECTRICALLY CONDUCTIVE LAYER MICROCOATING TECHNOLOGIES, INC. 2001-08-07 US disclosed
US-6207522-B1 Formation of thin film capacitors MICROCOATING TECHNOLOGIES 2001-03-27 US disclosed