⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20312543 | 0.95 | — | — | |
| SCHEMBL5831872 | 0.95 | — | — | |
| SCHEMBL1493180 | 0.85 | — | — | |
| SCHEMBL8825608 | 0.82 | — | — | |
| SCHEMBL80200 | 0.82 | — | — | |
| SCHEMBL18079763 | 0.82 | — | — | |
| SCHEMBL680313 | 0.82 | — | — | |
| SCHEMBL19999739 | 0.80 | — | — | |
| SCHEMBL12387143 | 0.80 | — | — | |
| SCHEMBL3483256 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12303518-B2 | System for providing birth control | THE POPULATION COUNCIL, INC. (US) | 2025-05-20 | — | — | US | disclosed |
| US-20240252428-A1 | METHODS OF PROVIDING BIRTH CONTROL | THE POPULATION COUNCIL INC (US) | 2024-08-01 | — | — | US | disclosed |
| US-12043740-B2 | Light transmittance control film and composition for the light transmittance control film | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) | 2024-07-23 | — | — | US | disclosed |
| US-11850251-B2 | System for providing birth control | THE POPULATION COUNCIL, INC. (US) | 2023-12-26 | — | — | US | disclosed |
| US-20230240982-A1 | SYSTEM FOR PROVIDING BIRTH CONTROL | THE POPULATION COUNCIL, INC. (US) | 2023-08-03 | — | — | US | disclosed |
| US-11529308-B2 | System for providing birth control | THE POPULATION COUNCIL, INC. (US) | 2022-12-20 | — | — | US | disclosed |
| EP-3986375-A1 | SYSTEM FOR PROVIDING BIRTH CONTROL | THE POPULATION COUNCIL, INC. (US) | 2022-04-27 | — | — | EP | disclosed |
| CN-114364369-A | System for providing birth control | 人口理事会公司 | 2022-04-15 | — | — | CN | disclosed |
| US-20220054503-A1 | SYSTEM FOR PROVIDING BIRTH CONTROL | THE POPULATION COUNCIL, INC. (US) | 2022-02-24 | — | — | US | disclosed |
| US-20210290637-A1 | SYSTEM FOR PROVIDING BIRTH CONTROL | THE POPULATION COUNCIL, INC. (US) | 2021-09-23 | — | — | US | disclosed |
| US-20090115031-A1 | SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND PASSIVATING COUPLING MATERIAL COMPRISING MULTIPLE ORGANIC COMPONENTS FOR USE IN A SEMICONDUCTOR DEVICE | FREESCALE SEMICONDUCTOR, INC. (US) | 2009-05-07 | — | — | US | disclosed |
| US-20090115031-A1 | SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND PASSIVATING COUPLING MATERIAL COMPRISING MULTIPLE ORGANIC COMPONENTS FOR USE IN A SEMICONDUCTOR DEVICE | FREESCALE SEMICONDUCTOR, INC. (US) | 2009-05-07 | — | — | US | disclosed |
| WO-2009007793-A1 | COUPLING LAYER COMPOSITION FOR A SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF FORMING THE COUPLING LAYER, AND APPARATUS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE | FREESCALE SEMICONDUCTOR, INC. (GB) | 2009-01-15 | — | — | WO | disclosed |
| US-20080197487-A1 | Semiconductor Device Including a Coupled Dielectric Layer and Metal Layer, Method of Fabrication Thereof, and Material for Coupling a Dielectric Layer and a Metal Layer in a Semiconductor Device | NXP B.V. (NL) | 2008-08-21 | — | — | US | disclosed |
| US-20080197487-A1 | Semiconductor Device Including a Coupled Dielectric Layer and Metal Layer, Method of Fabrication Thereof, and Material for Coupling a Dielectric Layer and a Metal Layer in a Semiconductor Device | NXP B.V. (NL) | 2008-08-21 | — | — | US | disclosed |
| EP-1924632-A2 | SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND MATERIAL FOR COUPLING A DIELECTRIC LAYER AND A METAL LAYER IN A SEMICONDUCTOR DEVICE | Freescale Semiconductor, Inc. (US) | 2008-05-28 | — | — | EP | disclosed |
| WO-2007095972-A1 | SEMICONDUCTORDEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND PASSIVATING COUPLING MATERIAL COMPRISSING MULTIPLE ORGANIC COMPONENTS FOR USE IN A SEMICONDUCTOR DEVICE | FREESCALE SEMICONDUCTOR, INC. (US) | 2007-08-30 | — | — | WO | disclosed |
| WO-2007095973-A1 | INTEGRATED SYSTEM FOR SEMICONDUCTOR SUBSTRATE PROCESSING USING LIQUID PHASE METAL DEPOSITION | FREESCALE SEMICONDUCTOR, INC. (US) | 2007-08-30 | — | — | WO | disclosed |
| WO-2007026010-A2 | SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND MATERIAL FOR COUPLING A DIELECTRIC LAYER AND A METAL LAYER IN A SEMICONDUCTOR DEVICE | FREESCALE SEMICONDUCTOR, INC. (US) | 2007-03-08 | — | — | WO | disclosed |
| WO-2007025565-A1 | SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND MATERIAL FOR COUPLING A DIELECTRIC LAYER AND A METAL LAYER IN A SEMICONDUCTOR DEVICE | FREESCALE SEMICONDUCTOR, INC. (US) | 2007-03-08 | — | — | WO | disclosed |