⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8522991 | 0.89 | — | — | |
| SCHEMBL15938 | 0.89 | — | — | |
| Ammonia Solution, Strong SCHEMBL202470 | 0.80 | — | — | |
| SCHEMBL11334969 | 0.80 | — | — | |
| SCHEMBL9421553 | 0.80 | — | — | |
| SCHEMBL3628469 | 0.80 | — | — | |
| Water SCHEMBL8854200 | 0.80 | — | — | |
| Water SCHEMBL250510 | 0.80 | TSHR (0.43) | — | |
| SCHEMBL15008463 | 0.80 | — | — | |
| SCHEMBL1850766 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6756297-B2 | Method of fabricating copper-based semiconductor devices using a sacrificial dielectric layer | ADVANCED MICRO DEVICES, INC. | 2004-06-29 | — | — | US | disclosed |
| US-20020155694-A1 | Method of fabricating copper-based semiconductor devices using a sacrificial dielectric layer | ADVANCED MICRO DEVICES, INC. | 2002-10-24 | — | — | US | disclosed |
| EP-1250716-A1 | METHOD OF FABRICATING COPPER INTERCONNECTIONS USING A SACRIFICIAL DIELECTRIC LAYER | ADVANCED MICRO DEVICES, INC. (US) | 2002-10-23 | — | — | EP | disclosed |
| EP-1250715-A1 | METHOD OF FABRICATING COPPER INTERCONNECTIONS IN SEMICONDUCTOR DEVICES | ADVANCED MICRO DEVICES, INC. (US) | 2002-10-23 | — | — | EP | disclosed |
| US-6355555-B1 | Method of fabricating copper-based semiconductor devices using a sacrificial dielectric layer | ADVANCED MICRO DEVICES, INC. | 2002-03-12 | — | — | US | disclosed |
| US-6303486-B1 | FORMING DIELECTRIC LAYER, OPENING IN DIELECTRIC LAYER; FORMING COPPER STRUCTURE; FORMING SACRIFICIAL DIELECTRIC LAYER; FORMING SECOND DIELECTRIC LAYER, OPENING, COPPER STRUCURE AND REMOVING; FORMING COPPER INTERCONNECT BY ANNEALING | ADVANCED MICRO DEVICES, INC. | 2001-10-16 | — | — | US | disclosed |
| WO-2001056077-A1 | METHOD OF FABRICATING COPPER INTERCONNECTIONS IN SEMICONDUCTOR DEVICES | ADVANCED MICRO DEVICES, INC. (US) | 2001-08-02 | — | — | WO | disclosed |
| WO-2001056078-A1 | METHOD OF FABRICATING COPPER INTERCONNECTIONS USING A SACRIFICIAL DIELECTRIC LAYER | ADVANCED MICRO DEVICES, INC. (US) | 2001-08-02 | — | — | WO | disclosed |