SCHEMBL6882297

SCHEMBL6882297

CC1=C(C)CCCCCCCCCCCCCCCC1

nearest known ligand 0.38

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TRIM24 O15164 2/20 0.38
TRIM33 Q9UPN9 2/20 0.38
ALDH1A1 P00352 1/20 0.38
TSHR P16473 1/20 0.32
CASP1 P29466 1/20 0.32
POLB P06746 1/20 0.31
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8461483 1.00 TRIM24 (0.38) TRIM24TRIM33ALDH1A1TSHRCASP1
SCHEMBL19178735 1.00 TRIM24 (0.38) TRIM24TRIM33ALDH1A1TSHRCASP1
SCHEMBL1052903 1.00 TRIM24 (0.38) TRIM24TRIM33ALDH1A1TSHRCASP1
SCHEMBL19178734 1.00 TRIM24 (0.38) TRIM24TRIM33ALDH1A1TSHRCASP1
SCHEMBL19178733 1.00 TRIM24 (0.38) TRIM24TRIM33ALDH1A1TSHRCASP1
SCHEMBL151215 1.00
SCHEMBL8461479 1.00 TRIM24 (0.38) TRIM24TRIM33ALDH1A1TSHRCASP1
SCHEMBL8461939 1.00 TRIM24 (0.38) TRIM24TRIM33ALDH1A1TSHRCASP1
SCHEMBL8461935 1.00 TRIM24 (0.38) TRIM24TRIM33ALDH1A1TSHRCASP1
SCHEMBL28365053 1.00 TRIM24 (0.38) TRIM24TRIM33ALDH1A1TSHRCASP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6749671-B2 Abatement of effluents from chemical vapor deposition processes using organometallic source reagents ADVANCED TECHNOLOGY MATERIALS, INC. 2004-06-15 US disclosed
US-20030136265-A1 Abatement of effluents from chemical vapor deposition processes using organometallic source reagents APPLIED MATERIALS, INC. 2003-07-24 US disclosed
US-6537353-B2 Contacting effluent with sorbent material having sorptive affinity for source reagent and decomposition products thereof to remove residual source reagent and decomposition products ADVANCED TECHNOLOGY MATERIALS, INC. 2003-03-25 US disclosed
CN-1379732-A Abatement of effluents from chemical vapor deposition processes using organome tallicsource reagents ADVANCED TECH MATERIALS (US) 2002-11-13 CN disclosed
EP-1237815-A1 ABATEMENT OF EFFLUENTS FROM CHEMICAL VAPOR DEPOSITION PROCESSES USING ORGANOMETALLICSOURCE REAGENTS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2002-09-11 EP disclosed
WO-2001028917-A9 ABATEMENT OF EFFLUENTS FROM CHEMICAL VAPOR DEPOSITION PROCESSES USING ORGANOMETALLICSOURCE REAGENTS ADVANCED TECH MATERIALS (US) 2002-08-08 WO disclosed
US-20020094380-A1 Abatement of effluents from chemical vapor deposition processes using organometallicsource reagents ADVANCED TECHNOLOGY MATERIALS, INC. 2002-07-18 US disclosed
US-6391385-B1 USING SOURCE REAGENT HAVING A METAL ORGANIC LOOSELY BOUND TO AN ORGANIC OR ORGANOMETALLIC MOLECULE SUCH THAT UPON EXPOSURE TO HEAT SUCH BOND IS READILY CLEAVABLE ADVANCED TECHNOLOGY MATERIALS, INC. 2002-05-21 US disclosed
WO-2001028917-A1 ABATEMENT OF EFFLUENTS FROM CHEMICAL VAPOR DEPOSITION PROCESSES USING ORGANOMETALLICSOURCE REAGENTS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2001-04-26 WO disclosed