⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22050 | 0.89 | — | — | |
| SCHEMBL29197829 | 0.80 | — | — | |
| Water SCHEMBL29797396 | 0.80 | — | — | |
| SCHEMBL30468574 | 0.80 | — | — | |
| SCHEMBL2167523 | 0.80 | — | — | |
| Water SCHEMBL7522107 | 0.80 | — | — | |
| SCHEMBL9471566 | 0.80 | — | — | |
| Water SCHEMBL29797428 | 0.80 | — | — | |
| Water SCHEMBL29797471 | 0.80 | — | — | |
| Water SCHEMBL29797475 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6822299-B2 | Boron-doped titanium nitride layer for high aspect ratio semiconductor devices | MICRON TECHNOLOGY INC. | 2004-11-23 | — | — | US | claimed |
| EP-0723601-A4 | A METHOD FOR CHEMICAL VAPOR DEPOSITION OF TITANIUM NITRIDE FILMS AT LOW TEMPERATURES | MATERIALS RESEARCH CORP (US) | 1998-08-19 | — | — | EP | claimed |
| EP-0723601-A1 | A METHOD FOR CHEMICAL VAPOR DEPOSITION OF TITANIUM NITRIDE FILMS AT LOW TEMPERATURES | MATERIALS RESEARCH CORPORATION (US) | 1996-07-31 | — | — | EP | claimed |
| WO-1995009933-A1 | A METHOD FOR CHEMICAL VAPOR DEPOSITION OF TITANIUM NITRIDE FILMS AT LOW TEMPERATURES | MATERIALS RESEARCH CORPORATION (US) | 1995-04-13 | — | — | WO | claimed |
| CN-110003490-A | A kind of functional ordered mesopore polymer material and preparation method and application | 上海师范大学 | 2019-07-12 | — | — | CN | disclosed |
| CN-106011785-A | Method for preparing high-uniformity Nb-doped TiO2 transparent conducting thin film through atomic layer deposition | 上海纳米技术及应用国家工程研究中心有限公司 | 2016-10-12 | — | — | CN | disclosed |
| CN-104229880-A | Method for preparing high-purity titanium dioxide | TIANJIN FENGCHUAN CHEMICAL REAGENT CO LTD | 2014-12-24 | — | — | CN | disclosed |
| CN-100532274-C | Low temperature synthesis of ultrafine rutile titanium dioxide particles | COUNCIL SCIENT IND RES (IN) | 2009-08-26 | — | — | CN | disclosed |
| CN-1886341-A | Low temperature synthesis of ultrafine rutile titanium dioxide particles | COUNCIL SCIENT IND RES (IN) | 2006-12-27 | — | — | CN | disclosed |
| EP-0832311-B1 | PROCESS FOR PLASMA ENHANCED ANNEAL OF TITANIUM NITRIDE | TOKYO ELECTRON LTD (JP) | 1999-07-14 | — | — | EP | disclosed |
| EP-0832311-A1 | PROCESS FOR PLASMA ENHANCED ANNEAL OF TITANIUM NITRIDE | MATERIALS RESEARCH CORPORATION (US) | 1998-04-01 | — | — | EP | disclosed |
| WO-1996039548-A1 | PROCESS FOR PLASMA ENHANCED ANNEAL OF TITANIUM NITRIDE | MATERIALS RESEARCH CORPORATION (US) | 1996-12-12 | — | — | WO | disclosed |
| US-5567483-A | RADIO FRENQUENCY GENERATING A GAS FLOW OF AMMONIA AND NITROGEN FOR LOW TEMPERATURE VAPOR DEPOSITION | SONY CORPORATION (JP) | 1996-10-22 | — | — | US | disclosed |