SCHEMBL6891907

SCHEMBL6891907

[Al].[N].[Si]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6891903 1.00
SCHEMBL29869586 0.87
SCHEMBL2254437 0.87
SCHEMBL11240122 0.87
Charcoal, Activated SCHEMBL2460629 0.87
SCHEMBL38650839 0.87
SCHEMBL11240123 0.87
Charcoal, Activated SCHEMBL2460628 0.87
SCHEMBL5520177 0.87
SCHEMBL2254434 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110676172-A Method for realizing low-on-resistance enhanced gallium nitride transistor 西交利物浦大学 2020-01-10 CN claimed
CN-110648914-A Method for improving breakdown voltage of gallium nitride transistor 西交利物浦大学 2020-01-03 CN claimed
CN-110581068-A Method for realizing low-on-resistance enhanced gallium nitride transistor by using gate dielectric 西交利物浦大学 2019-12-17 CN claimed
EP-0719213-B1 PASSIVATION OF CERAMIC PIEZOELECTRIC INK JET PRINT HEADS XAAR TECHNOLOGY LTD (GB) 1998-08-12 EP claimed
EP-0844089-A2 Passivation of ceramic piezoelectric ink jet print heads XAAR LIMITED (GB) 1998-05-27 EP claimed
US-5731048-A Passivation of ceramic piezoelectric ink jet print heads XAAR LIMITED (GB) 1998-03-24 US claimed
US-20230118944-A1 SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF ENKRIS SEMICONDUCTOR, INC. (CN) 2023-04-20 US disclosed
CN-110648914-B Method for improving breakdown voltage of gallium nitride transistor 西交利物浦大学 2023-04-11 CN disclosed
CN-110676172-A Method for realizing low-on-resistance enhanced gallium nitride transistor 西交利物浦大学 2020-01-10 CN disclosed
CN-110648914-A Method for improving breakdown voltage of gallium nitride transistor 西交利物浦大学 2020-01-03 CN disclosed
CN-110581068-A Method for realizing low-on-resistance enhanced gallium nitride transistor by using gate dielectric 西交利物浦大学 2019-12-17 CN disclosed
CN-105385991-A Preparation method of drill bit with coating SUZHOU JIEDERUI PREC MACHINERY CO LTD 2016-03-09 CN disclosed
US-6802598-B2 Ink jet head and production method of the same KONICA CORPORATION (JP) 2004-10-12 US disclosed
EP-0844089-A2 Passivation of ceramic piezoelectric ink jet print heads XAAR LIMITED (GB) 1998-05-27 EP disclosed
US-5731048-A Passivation of ceramic piezoelectric ink jet print heads XAAR LIMITED (GB) 1998-03-24 US disclosed
EP-0719213-A1 PASSIVATION OF CERAMIC PIEZOELECTRIC INK JET PRINT HEADS XAAR LIMITED (GB) 1996-07-03 EP disclosed
US-5453527-A Silicon-aluminium nitride ceramic and precursor compounds, processes for their preparation and their use BAYER AKTIENGESELLSCHAFT (DE) 1995-09-26 US disclosed
WO-1995007820-A1 PASSIVATION OF CERAMIC PIEZOELECTRIC INK JET PRINT HEADS XAAR LIMITED (GB) 1995-03-23 WO disclosed
CN-1059137-A High-fracture toughness self-reinforced silicon nitride ceramic and prepare this ceramic method DOW CHEMICAL CO (US) 1992-03-04 CN disclosed
EP-0087888-A2 Method of forming ceramic materials and ceramic products, and ceramic materials and ceramic products formed thereby LUCAS INDUSTRIES public limited company (GB) 1983-09-07 EP disclosed