SCHEMBL6892841

SCHEMBL6892841

CCc1ccc2cc3cc4ccccc4cc3cc2c1

nearest known ligand 0.86

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.86
CYP2A6 P11509 1/20 0.86
HTR2A P28223 1/20 0.48
HTR2C P28335 1/20 0.48
HTR2B P41595 1/20 0.48
TP53 P04637 1/20 0.46
AKR1C3 P42330 1/20 0.46
AKR1C2 P52895 1/20 0.46
SIGMAR1 Q99720 1/20 0.46
ALDH1A1 P00352 2/20 0.45
RIOK2 Q9BVS4 1/20 0.45
NPC1 O15118 1/20 0.45
LMNA P02545 1/20 0.45
MAPT P10636 1/20 0.45
MAPK1 P28482 1/20 0.45
RAB9A P51151 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
L3MBTL1 Q9Y468 1/20 0.45
CYP3A4 P08684 1/20 0.44
ALOX15 P16050 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6890420 1.00 CYP1A2 (0.86) CYP1A2CYP2A6HTR2AHTR2CHTR2B
SCHEMBL40950 1.00 CYP1A2 (0.86) CYP1A2CYP2A6HTR2AHTR2CHTR2B
SCHEMBL30288474 1.00 CYP1A2 (0.86) CYP1A2CYP2A6HTR2AHTR2CHTR2B
SCHEMBL27569471 0.98 CYP1A2 (0.83) CYP1A2CYP2A6HTR2AHTR2CHTR2B
SCHEMBL28328767 0.98 CYP1A2 (0.83) CYP1A2CYP2A6HTR2AHTR2CHTR2B
SCHEMBL31534025 0.93 CYP2A6 (1.00) CYP1A2CYP2A6HTR2AHTR2CHTR2B
SCHEMBL73386 0.93 CYP2A6 (1.00) CYP1A2CYP2A6HTR2AHTR2CHTR2B
SCHEMBL6885287 0.93 CYP2A6 (0.73) CYP1A2CYP2A6HTR2AHTR2CHTR2B
SCHEMBL6890734 0.93 CYP2A6 (0.73) CYP1A2CYP2A6HTR2AHTR2CHTR2B
Lithium SCHEMBL31073461 0.91 CYP2A6 (0.95) CYP1A2CYP2A6HTR2AHTR2CHTR2B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1481428-A1 ORGANIC THIN FILM TRANSISTOR WITH MODIFIED SURFACE OF GATE-DIELECTRIC 3M Innovative Properties Company (US) 2004-12-01 EP claimed
US-6768132-B2 MULTILAYER INTEGRATED CIRCUIT; BARRIER DIELECTRIC AND SEMICONDUCTOR 3M INNOVATIVE PROPERTIES COMPANY 2004-07-27 US claimed
US-20030175551-A1 Surface modified organic thin film transistors 3M INNOVATIVE PROPERTIES COMPANY 2003-09-18 US claimed
WO-2003077327-A1 ORGANIC THIN FILM TRANSISTORS WITH MODIFIED SURFACE OF GATE-DIELECTRIC 3M INNOVATIVE PROPERTIES COMPANY (US) 2003-09-18 WO claimed
EP-1481428-A1 ORGANIC THIN FILM TRANSISTOR WITH MODIFIED SURFACE OF GATE-DIELECTRIC 3M Innovative Properties Company (US) 2004-12-01 EP disclosed
US-6768132-B2 MULTILAYER INTEGRATED CIRCUIT; BARRIER DIELECTRIC AND SEMICONDUCTOR 3M INNOVATIVE PROPERTIES COMPANY 2004-07-27 US disclosed
US-20030175551-A1 Surface modified organic thin film transistors 3M INNOVATIVE PROPERTIES COMPANY 2003-09-18 US disclosed
WO-2003077327-A1 ORGANIC THIN FILM TRANSISTORS WITH MODIFIED SURFACE OF GATE-DIELECTRIC 3M INNOVATIVE PROPERTIES COMPANY (US) 2003-09-18 WO disclosed