SCHEMBL692273

SCHEMBL692273

CC(F)C(F)(F)[Si](C)(O[Si](C)(C)C)C(F)(F)C(C)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1538619 0.75
SCHEMBL13673678 0.74
SCHEMBL9622152 0.72
SCHEMBL16045256 0.72
SCHEMBL7037718 0.70
SCHEMBL1538786 0.69
SCHEMBL3889960 0.69
SCHEMBL2399457 0.69
SCHEMBL1051031 0.66
SCHEMBL445491 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US claimed
US-7405168-B2 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMITED (JP) 2008-07-29 US claimed
US-20080076262-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2008-03-27 US claimed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US claimed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US claimed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO claimed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US claimed
US-12497698-B2 Coatings formed from the deposition of plasma-activated adducts SOUTHWEST RESEARCH INSTITUTE (US) 2025-12-16 US disclosed
US-20240157346-A1 Nanocatalysts for Electrochemical Hydrogen Production and Catalyst Screening Methods NORTHWESTERN UNIVERSITY 2024-05-16 US disclosed
US-20200230581-A1 NANOCATALYSTS FOR ELECTROCHEMICAL HYDROGEN PRODUCTION AND CATALYST SCREENING METHODS NORTHWESTERN UNIVERSITY 2020-07-23 US disclosed
US-20170321326-A1 COATINGS FORMED FROM THE DEPOSITION OF PLASMA-ACTIVATED ADDUCTS SHELL OIL COMPANY 2017-11-09 US disclosed
WO-2017192984-A1 COATINGS FORMED FROM THE DEPOSITION OF PLASMA-ACTIVATED ADDUCTS SOUTHWEST RESEARCH INSTITUTE (US) 2017-11-09 WO disclosed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO disclosed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US disclosed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US disclosed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US disclosed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO disclosed