Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FAAH | O00519 | 8/20 | 0.32 |
| ▸ | MEN1 | O00255 | 2/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.31 |
| ▸ | CES2 | O00748 | 3/20 | 0.31 |
| ▸ | CES1 | P23141 | 5/20 | 0.31 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.31 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6856837 | 0.84 | — | — | |
| SCHEMBL12190115 | 0.83 | — | — | |
| SCHEMBL4401688 | 0.81 | TSHR (0.42) | MEN1KMT2A | |
| SCHEMBL3221563 | 0.80 | TSHR (0.41) | MEN1KMT2A | |
| SCHEMBL12521047 | 0.80 | TSHR (0.41) | MEN1KMT2A | |
| SCHEMBL15284478 | 0.77 | TSHR (0.45) | MEN1KMT2A | |
| SCHEMBL6431291 | 0.77 | — | — | |
| Methacrylic Acid SCHEMBL28308876 | 0.77 | TSHR (0.38) | MEN1KMT2A | |
| SCHEMBL21127001 | 0.76 | CYP4F2 (0.36) | MEN1KMT2A | |
| SCHEMBL3225251 | 0.76 | TSHR (0.44) | MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8557501-B2 | Developable bottom antireflective coating compositions especially suitable for ion implant applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-10-15 | — | — | US | disclosed |
| US-8557501-B2 | Developable bottom antireflective coating compositions especially suitable for ion implant applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-10-15 | — | — | US | disclosed |
| US-20120178029-A1 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-07-12 | — | — | US | disclosed |
| US-20120178029-A1 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-07-12 | — | — | US | disclosed |
| US-8182978-B2 | Developable bottom antireflective coating compositions especially suitable for ion implant applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-05-22 | — | — | US | disclosed |
| US-8182978-B2 | Developable bottom antireflective coating compositions especially suitable for ion implant applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-05-22 | — | — | US | disclosed |
| US-20100196825-A1 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-08-05 | — | — | US | disclosed |
| WO-2010086288-A1 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS AND METHOD OF FORMING A PATTERN USING IT | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-08-05 | — | — | WO | disclosed |
| US-20100196825-A1 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-08-05 | — | — | US | disclosed |
| US-7651831-B2 | Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-01-26 | — | — | US | disclosed |
| US-7651831-B2 | Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-01-26 | — | — | US | disclosed |
| US-7638264-B2 | forming pattern on semiconductors; acrylic terpolymer with fluorosulfonamide-containing unit e.g. 2-trifluoromethanesulfonylaminoethyl methacrylate, second unit having pendant acid labile group, and third unit having a lactone moiety, and acid generator; good etch resistance and dissolution properties | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-12-29 | — | — | US | disclosed |
| US-7638264-B2 | forming pattern on semiconductors; acrylic terpolymer with fluorosulfonamide-containing unit e.g. 2-trifluoromethanesulfonylaminoethyl methacrylate, second unit having pendant acid labile group, and third unit having a lactone moiety, and acid generator; good etch resistance and dissolution properties | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-12-29 | — | — | US | disclosed |
| US-20080233514-A1 | POSITIVE PHOTORESIST COMPOSITION WITH A POLYMER INCLUDING A FLUOROSULFONAMIDE GROUP AND PROCESS FOR ITS USE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-09-25 | — | — | US | disclosed |
| US-20080233514-A1 | POSITIVE PHOTORESIST COMPOSITION WITH A POLYMER INCLUDING A FLUOROSULFONAMIDE GROUP AND PROCESS FOR ITS USE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-09-25 | — | — | US | disclosed |