⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9656044 | 0.83 | — | — | |
| SCHEMBL2200322 | 0.79 | NPSR1 (0.33) | — | |
| SCHEMBL762180 | 0.78 | NPSR1 (0.45) | — | |
| SCHEMBL468221 | 0.78 | NPSR1 (0.32) | — | |
| SCHEMBL2082192 | 0.75 | NPSR1 (0.33) | — | |
| SCHEMBL15925090 | 0.75 | NPSR1 (0.47) | — | |
| SCHEMBL6892632 | 0.74 | FFAR3 (0.37) | — | |
| SCHEMBL11372937 | 0.73 | SMN1; SMN2 (0.37) | — | |
| SCHEMBL15925048 | 0.71 | NPSR1 (0.42) | — | |
| SCHEMBL3125035 | 0.71 | FFAR3 (0.39) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10928727-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank including actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing | FUJIFILM CORPORATION (JP) | 2021-02-23 | — | — | US | disclosed |
| US-10423068-B2 | Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2019-09-24 | — | — | US | disclosed |
| US-20180120701-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170176858-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170174801-A1 | NON-CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION, NON-CHEMICAL AMPLIFICATION TYPE RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-9323150-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-9188862-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same | FUJIFILM CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-20140295332-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2014-10-02 | — | — | US | disclosed |
| US-20140227636-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| US-20020102491-A1 | Comprising iodinium or sulfonium salt capable of generating a specified sulfonic acid upon irradiation and an acid decomposable resin (such as polyhydroxystyrene) | FUJI PHOTO FILM CO., LTD. | 2002-08-01 | — | — | US | disclosed |
| EP-1199603-A9 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2002-07-31 | — | — | EP | disclosed |
| US-20020058200-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2002-05-16 | — | — | US | disclosed |
| EP-1199603-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2002-04-24 | — | — | EP | disclosed |
| US-6376152-B2 | MIXTURE OF A COMPOUND WHICH GENERATES AN ACID UPON RADIATION, RESIN AND NITROGEN-CONTAINING COMPOUND | FUJI PHOTO FILM CO., LTD. (JP) | 2002-04-23 | — | — | US | disclosed |
| US-20020006578-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2002-01-17 | — | — | US | disclosed |
| EP-1158363-A1 | Positive resist composition and onium salts of saccharin derivatives | FUJI PHOTO FILM CO., LTD. (JP) | 2001-11-28 | — | — | EP | disclosed |
| US-20010041300-A1 | Positive photoresist composition | FUJIFILM CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| US-20010021479-A1 | Positive photoresist composition | FUJIFILM CORPORATION (JP) | 2001-09-13 | — | — | US | disclosed |
| US-20010008739-A1 | Positive photoresist composition for exposure to far ultraviolet ray | FUJIFILM CORPORATION (JP) | 2001-07-19 | — | — | US | disclosed |