⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL706305 | 0.88 | — | — | |
| SCHEMBL704185 | 0.88 | — | — | |
| SCHEMBL704963 | 0.83 | — | — | |
| SCHEMBL706135 | 0.83 | — | — | |
| SCHEMBL4281426 | 0.83 | — | — | |
| SCHEMBL4279893 | 0.83 | — | — | |
| SCHEMBL3554767 | 0.80 | — | — | |
| SCHEMBL13089210 | 0.79 | — | — | |
| SCHEMBL13089541 | 0.77 | — | — | |
| SCHEMBL10064756 | 0.75 | TSHR (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10991571-B2 | High temperature atomic layer deposition of silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2021-04-27 | — | — | US | claimed |
| US-20190189431-A1 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films | VERSUM MATERIALS US, LLC (US) | 2019-06-20 | — | — | US | claimed |
| US-20170256399-A9 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2017-09-07 | — | — | US | claimed |
| US-20160365244-A1 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-12-15 | — | — | US | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
| US-20250188609-A1 | SEAM-FREE AND CRACK-FREE DEPOSITION | LAM RES CORP (US) | 2025-06-12 | — | — | US | disclosed |
| US-20250038003-A1 | LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS | LAM RESEARCH CORPORATION (US) | 2025-01-30 | — | — | US | disclosed |
| US-20250014890-A1 | CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF | LAM RESEARCH CORPORATION | 2025-01-09 | — | — | US | disclosed |
| WO-2024243002-A1 | LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE | LAM RESEARCH CORPORATION (US) | 2024-11-28 | — | — | WO | disclosed |
| CN-118402040-A | Low temperature molybdenum deposition assisted by silicon-containing reactants | 朗姆研究公司 | 2024-07-26 | — | — | CN | disclosed |
| CN-118355473-A | Conformal carbon-doped silicon nitride films and methods thereof | 朗姆研究公司 | 2024-07-16 | — | — | CN | disclosed |
| CN-109976097-B | Method of forming micropattern and substrate processing apparatus | 三星电子株式会社 | 2024-06-18 | — | — | CN | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-20060269724-A1 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2006-11-30 | — | — | US | disclosed |
| US-6787193-B2 | DECOMPOSITION OF AN ORGANOSILICON COMPOUND | JSR CORPORATION (JP) | 2004-09-07 | — | — | US | disclosed |
| US-20040077757-A1 | Coating composition for use in producing an insulating thin film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2004-04-22 | — | — | US | disclosed |
| US-20030008155-A1 | Method for the formation of silica film, silica film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2003-01-09 | — | — | US | disclosed |
| EP-1267395-A2 | Method for the formation of silica film, silica film, insulating film, and semiconductor device | JSR Corporation (JP) | 2002-12-18 | — | — | EP | disclosed |
| US-4599393-A | Method for polymerizing lactams and products obtained therefrom | GENERAL ELECTRIC COMPANY (US) | 1986-07-08 | — | — | US | disclosed |