SCHEMBL703046

SCHEMBL703046

CCCC[Si](Br)(CCCC)CCC[Si](Br)(CCCC)CCCC

nearest known ligand 0.38

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.38
LMNA P02545 1/20 0.38
THRB P10828 1/20 0.35
ALDH1A1 P00352 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707658 0.97 TSHR (0.40) TSHRLMNATHRBALDH1A1TDP1
SCHEMBL706521 0.93 TSHR (0.38) TSHRLMNATHRBALDH1A1TDP1
SCHEMBL706533 0.93 TSHR (0.38) TSHRLMNATHRBALDH1A1TDP1
SCHEMBL18108473 0.88 TSHR (0.47) TSHRLMNATHRBALDH1A1
SCHEMBL18108351 0.88 TSHR (0.47) TSHRLMNATHRBALDH1A1
SCHEMBL18108118 0.88 TSHR (0.47) TSHRLMNATHRBALDH1A1
SCHEMBL18108035 0.88 TSHR (0.47) TSHRLMNATHRBALDH1A1
SCHEMBL18108354 0.88 TSHR (0.47) TSHRLMNATHRBALDH1A1
SCHEMBL705331 0.87
SCHEMBL20500228 0.87 TSHR (0.44) TSHRLMNATHRBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed