SCHEMBL703899

SCHEMBL703899

c1ccc(C(O[SiH2]CCCC[SiH2]OC(c2ccccc2)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SCN1A P35498 3/20 0.37
SCN2A Q99250 3/20 0.37
SCN3A Q9NY46 3/20 0.37
HTR2A P28223 3/20 0.37
LMNA P02545 2/20 0.37
HRH1 P35367 2/20 0.37
HTT P42858 2/20 0.37
CYP1A2 P05177 1/20 0.37
CHRM2 P08172 1/20 0.37
CHRM4 P08173 1/20 0.37
CHRM5 P08912 1/20 0.37
ADRA2A P08913 1/20 0.37
CYP2D6 P10635 1/20 0.37
CHRM1 P11229 1/20 0.37
TSHR P16473 1/20 0.37
ADRA2B P18089 1/20 0.37
CHRM3 P20309 1/20 0.37
SLC6A2 P23975 1/20 0.37
HRH2 P25021 1/20 0.37
HTR2C P28335 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705601 0.96 SCN1A (0.37) SCN1ASCN2ASCN3AHTR2ALMNA
SCHEMBL708230 0.91 SCN1A (0.39) SCN1ASCN2ASCN3AHTR2ALMNA
SCHEMBL3415676 0.88 KCNH2 (0.40) SCN1ASCN2ASCN3AHTR2ALMNA
SCHEMBL22551517 0.88 SCN1A (0.37) SCN1ASCN2ASCN3AHTR2ALMNA
SCHEMBL3482443 0.83 HTT (0.43) SCN1ASCN2ASCN3AHTR2ALMNA
SCHEMBL704287 0.82 SCN1A (0.39) SCN1ASCN2ASCN3AHTR2ALMNA
SCHEMBL4076797 0.78 SCN1A (0.37) SCN1ASCN2ASCN3AHTR2ALMNA
SCHEMBL22551446 0.78 SCN1A (0.37) SCN1ASCN2ASCN3AHTR2ALMNA
SCHEMBL9954483 0.78 SCN1A (0.37) SCN1ASCN2ASCN3AHTR2ALMNA
SCHEMBL4079202 0.78 SCN1A (0.37) SCN1ASCN2ASCN3AHTR2ALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed