⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23701337 | 0.74 | — | — | |
| SCHEMBL23701237 | 0.74 | — | — | |
| SCHEMBL23701128 | 0.62 | — | — | |
| SCHEMBL25236500 | 0.62 | — | — | |
| SCHEMBL23701017 | 0.62 | — | — | |
| SCHEMBL149912 | 0.59 | — | — | |
| SCHEMBL3408 | 0.59 | — | — | |
| SCHEMBL707894 | 0.56 | — | — | |
| SCHEMBL692473 | 0.56 | — | — | |
| Hydrochloric Acid SCHEMBL637674 | 0.56 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024211411-A1 | PERFORMING ATOMIC LAYER ETCHING USING A SILANE-BASED CHEMISTRY | LAM RESEARCH CORPORATION (US) | 2024-10-10 | — | — | WO | claimed |
| WO-2024211411-A1 | PERFORMING ATOMIC LAYER ETCHING USING A SILANE-BASED CHEMISTRY | LAM RESEARCH CORPORATION (US) | 2024-10-10 | — | — | WO | disclosed |
| WO-2021110264-A1 | SILIRANE-FUNCTIONALISED COMPOUNDS, IN PARTICULAR ORGANOSILICON COMPOUNDS, FOR PREPARING SILOXANES | WACKER CHEMIE AG (DE) | 2021-06-10 | — | — | WO | disclosed |
| US-9970103-B2 | Film deposition material, sealing film using the same and use thereof | TOSOH CORPORATION (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20160326642-A1 | FILM DEPOSITION MATERIAL, SEALING FILM USING THE SAME AND USE THEREOF | TOSOH CORPORATION (JP) | 2016-11-10 | — | — | US | disclosed |
| US-20140219903-A1 | FILM DEPOSITION MATERIAL, SEALING FILM USING THE SAME AND USE THEREOF | TOSOH CORPORATION (JP) | 2014-08-07 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |