SCHEMBL706024

SCHEMBL706024

Br[Si](Br)(Br)CCC[Si](Br)(Br)Br

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1224965 0.79
SCHEMBL1225349 0.76
SCHEMBL706965 0.76
SCHEMBL706502 0.73
SCHEMBL703060 0.64
SCHEMBL3915910 0.50
SCHEMBL25406760 0.39
SCHEMBL37498 0.39
SCHEMBL1030445 0.39
SCHEMBL134582 0.39

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8426505-B2 Resin composition for laser engraving, relief printing starting plate for laser engraving, process for making relief printing plate, and relief printing plate FUJIFILM CORPORATION (JP) 2013-04-23 US disclosed
EP-2554393-A1 LASER-ENGRAVABLE FLEXOGRAPHIC PRINTING PLATE PRECURSOR FUJIFILM Corporation (JP) 2013-02-06 EP disclosed
US-20130020739-A1 FLEXOGRAPHIC PRINTING PLATE PRECURSOR FOR LASER ENGRAVING FUJIFILM CORPORATION (JP) 2013-01-24 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20110156317-A1 RESIN COMPOSITION FOR LASER ENGRAVING, RELIEF PRINTING STARTING PLATE FOR LASER ENGRAVING, PROCESS FOR MAKING RELIEF PRINTING PLATE, AND RELIEF PRINTING PLATE FUJIFILM CORPORATION (JP) 2011-06-30 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed