SCHEMBL706259

SCHEMBL706259

CC[SiH2]CC[SiH2]CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704724 0.82
SCHEMBL719935 0.82
SCHEMBL3397742 0.82
Water SCHEMBL27557056 0.79
SCHEMBL49670 0.78
SCHEMBL16784959 0.76
SCHEMBL7574772 0.76
SCHEMBL3397133 0.76
SCHEMBL6885951 0.76
Propane SCHEMBL23701103 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108404893-A A kind of silica gel chromatographic column filling material, preparation method and applications 浙江月旭材料科技有限公司 2018-08-17 CN claimed
CN-108176387-A A kind of silica gel chromatographic column filling material, preparation method and applications 浙江月旭材料科技有限公司 2018-06-19 CN claimed
CN-108404893-A A kind of silica gel chromatographic column filling material, preparation method and applications 浙江月旭材料科技有限公司 2018-08-17 CN disclosed
CN-108176387-A A kind of silica gel chromatographic column filling material, preparation method and applications 浙江月旭材料科技有限公司 2018-06-19 CN disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-5744196-A Low temperature deposition of silicon dioxide using organosilanes AIR PRODUCTS AND CHEMICALS, INC. (US) 1998-04-28 US disclosed
EP-0721019-A2 Low temperature deposition of silicon dioxide using organosilanes AIR PRODUCTS AND CHEMICALS, INC. (US) 1996-07-10 EP disclosed