SCHEMBL706376

SCHEMBL706376

CCCC[Si](Br)(Br)CCCC[Si](Br)(Br)CCCC

nearest known ligand 0.38

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TSHR P16473 5/20 0.38
LMNA P02545 3/20 0.38
ALDH1A1 P00352 4/20 0.37
THRB P10828 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
TP53 P04637 1/20 0.35
HSD17B10 Q99714 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
CES2 O00748 2/20 0.32
CES1 P23141 2/20 0.32
ANPEP P15144 1/20 0.32
EPHX1 P07099 2/20 0.31
AR P10275 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705533 0.97 TSHR (0.40) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL18108271 0.94 TSHR (0.47) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL18108255 0.94 TSHR (0.47) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL15302169 0.93 TSHR (0.44) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL705972 0.93 TSHR (0.38) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL704653 0.93 TSHR (0.38) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL1538966 0.90 TSHR (0.50) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL31286339 0.90 TSHR (0.50) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL10707085 0.90 TSHR (0.50) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL31286330 0.90 TSHR (0.50) TSHRLMNAALDH1A1THRBSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed