⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL704301 | 0.86 | ESR1 (0.34) | — | |
| SCHEMBL707019 | 0.75 | — | — | |
| SCHEMBL6859101 | 0.71 | — | — | |
| SCHEMBL705009 | 0.63 | ESR1 (0.34) | — | |
| SCHEMBL706421 | 0.63 | ESR1 (0.34) | — | |
| SCHEMBL8423081 | 0.63 | TYR (0.41) | — | |
| SCHEMBL1993021 | 0.63 | CYP2A6 (0.42) | — | |
| SCHEMBL706938 | 0.62 | NR1H2 (0.30) | — | |
| SCHEMBL707150 | 0.62 | — | — | |
| SCHEMBL703513 | 0.62 | NR1H2 (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-6800751-B2 | ALKYLATION OF 2'-HYDROXY GROUP OF RIBONUCLEOSIDE PROTECTED WITH INVENTIVE SILYLATING AGENTS IN PRESENCE OF EXCESS OF MILD HINDERED BASE MAY BE CARRIED OUT WITHOUT PROTECTING EXOCYCLIC AMINE AND OXO FUNCTIONALITIES OF NUCLEOBASES | ISIS PHARMACEUTICALS, INC. | 2004-10-05 | — | — | US | disclosed |
| US-20030225262-A1 | Reagent and process for protecting active groups | IONIS PHARMACEUTICALS, INC. | 2003-12-04 | — | — | US | disclosed |
| WO-2003087053-A2 | REAGENT AND PROCESS FOR PROTECTING NUCLEOSIDE ACTIVE GROUPS | ISIS PHARMACEUTICALS, INC. (US) | 2003-10-23 | — | — | WO | disclosed |