SCHEMBL706746

SCHEMBL706746

CC(=O)OC(CC[SiH2]CCCC[SiH2]CCC(OC(C)=O)OC(C)=O)OC(C)=O

nearest known ligand 0.36

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.36
TDP1 Q9NUW8 1/20 0.34
TRPV1 Q8NER1 1/20 0.34
CHRM2 P08172 1/20 0.32
CHRM4 P08173 1/20 0.32
CHRM1 P11229 1/20 0.32
TBXA2R P21731 1/20 0.32
GALR3 O60755 1/20 0.31
MAPT P10636 1/20 0.31
BLM P54132 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
PRKCA P17252 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704160 0.96 TSHR (0.36) TSHRTDP1TRPV1CHRM2CHRM4
SCHEMBL704469 0.92 TSHR (0.36) TSHRTDP1TRPV1CHRM2CHRM4
SCHEMBL704986 0.91 TSHR (0.39) TSHRTDP1TRPV1CHRM2CHRM4
SCHEMBL702599 0.88 TSHR (0.36) TSHRTDP1TRPV1CHRM2CHRM4
SCHEMBL707213 0.88 TSHR (0.36) TSHRTDP1TRPV1CHRM2CHRM4
SCHEMBL705614 0.85 TSHR (0.37) TSHRTDP1TRPV1CHRM2CHRM4
SCHEMBL707752 0.83 TSHR (0.39) TSHRTDP1TRPV1CHRM2CHRM4
SCHEMBL713402 0.82 TSHR (0.34) TSHRTRPV1CHRM2CHRM4CHRM1
SCHEMBL701706 0.78 TSHR (0.39) TSHRTDP1TRPV1CHRM2CHRM4
SCHEMBL2230506 0.77 TSHR (0.46) TSHRTDP1TRPV1CHRM2CHRM4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed