⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL702968 | 0.94 | — | — | |
| SCHEMBL704343 | 0.94 | — | — | |
| SCHEMBL707287 | 0.85 | — | — | |
| SCHEMBL705898 | 0.81 | — | — | |
| SCHEMBL704862 | 0.81 | — | — | |
| SCHEMBL28966196 | 0.80 | — | — | |
| SCHEMBL705590 | 0.80 | — | — | |
| SCHEMBL390117 | 0.78 | — | — | |
| SCHEMBL6063889 | 0.75 | — | — | |
| SCHEMBL390119 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115605530-B | Polycarbosilazanes and compositions comprising the same and methods of making silicon-containing films using the same | 默克专利有限公司 | 2024-09-27 | — | — | CN | disclosed |
| US-11999827-B2 | Polycarbosilazane, and composition comprising the same, and method for producing silicon-containing film using the same | MERCK PATENT GMBH (DE) | 2024-06-04 | — | — | US | disclosed |
| EP-4146725-B1 | POLYCARBOSILAZANE, AND COMPOSITION COMPRISING THE SAME, AND METHOD FOR PRODUCING SILICON-CONTAINING FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2024-05-22 | — | — | EP | disclosed |
| US-20230174724-A1 | POLYCARBOSILAZANE, AND COMPOSITION COMPRISING THE SAME, AND METHOD FOR PRODUCING SILICON-CONTAINING FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2023-06-08 | — | — | US | disclosed |
| CN-115605530-A | Polycarbosilazanes, compositions comprising the same, and methods of making silicon-containing films using the same | 默克专利有限公司（DE） | 2023-01-13 | — | — | CN | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |