⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL707628 | 0.96 | — | — | |
| SCHEMBL707218 | 0.89 | — | — | |
| SCHEMBL15091462 | 0.87 | — | — | |
| SCHEMBL15091641 | 0.87 | TSHR (0.33) | — | |
| SCHEMBL704011 | 0.85 | — | — | |
| SCHEMBL15967925 | 0.84 | — | — | |
| SCHEMBL15091905 | 0.84 | — | — | |
| SCHEMBL11350279 | 0.82 | — | — | |
| SCHEMBL15091729 | 0.82 | — | — | |
| SCHEMBL15091531 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 76 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024232632-A1 | TRANSITION METAL SUPPORTED CATALYST WITH IMPROVED HYDROGENATION ACTIVITY AND USE THEREOF | 한양대학교 산학협력단 | 2024-11-14 | — | — | WO | claimed |
| US-20190305372-A1 | LITHIUM SECONDARY BATTERY INCLUDING AN ELECTROLYTE ADDITIVE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-10-03 | — | — | US | claimed |
| US-20250026962-A1 | COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME | SOULBRAIN CO., LTD. (KR) | 2025-01-23 | — | — | US | disclosed |
| US-12163058-B2 | Semiconductor element | SOULBRAIN CO., LTD. (KR) | 2024-12-10 | — | — | US | disclosed |
| US-12146076-B2 | Semiconductor element | SOULBRAIN CO., LTD. (KR) | 2024-11-19 | — | — | US | disclosed |
| WO-2024232632-A1 | TRANSITION METAL SUPPORTED CATALYST WITH IMPROVED HYDROGENATION ACTIVITY AND USE THEREOF | 한양대학교 산학협력단 | 2024-11-14 | — | — | WO | disclosed |
| US-12012525-B2 | Composition for etching and manufacturing method of semiconductor device using the same | SOULBRAIN CO., LTD. (KR) | 2024-06-18 | — | — | US | disclosed |
| US-11912902-B2 | Composition for etching and manufacturing method of semiconductor device using the same | SOULBRAIN CO., LTD. (KR) | 2024-02-27 | — | — | US | disclosed |
| CN-117568038-A | Etching composition and method for manufacturing semiconductor device using the same | 秀博瑞殷株式公社 | 2024-02-20 | — | — | CN | disclosed |
| EP-3385353-B1 | COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME | SOULBRAIN CO LTD (KR) | 2023-12-13 | — | — | EP | disclosed |
| CN-108375878-B | Polymerizable composition, method for producing cured film, and cured film | 东京应化工业株式会社 | 2023-12-08 | — | — | CN | disclosed |
| EP-2650319-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | Daicel Corporation (JP) | 2013-10-16 | — | — | EP | disclosed |
| US-20130267653-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | DAICEL CORPORATION (JP) | 2013-10-10 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-20050118742-A1 | Method for reducing the adhesive properties of MEMS and anti-adhesion-coated device | ROBERT BOSCH GMBH (DE) | 2005-06-02 | — | — | US | disclosed |
| EP-0736538-A2 | Process for the preparation of fluorosilanes | PCR, Inc. (US) | 1996-10-09 | — | — | EP | disclosed |
| US-5466850-A | Process for the preparation of fluorosilanes | PCR, INC. (US) | 1995-11-14 | — | — | US | disclosed |