⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL392236 | 0.61 | — | — | |
| SCHEMBL3221257 | 0.61 | — | — | |
| SCHEMBL11554337 | 0.61 | — | — | |
| SCHEMBL29521614 | 0.50 | — | — | |
| SCHEMBL29570578 | 0.50 | — | — | |
| SCHEMBL10492481 | 0.35 | — | — | |
| SCHEMBL6063432 | 0.35 | — | — | |
| SCHEMBL333801 | 0.35 | — | — | |
| SCHEMBL2479202 | 0.35 | — | — | |
| SCHEMBL3411159 | 0.35 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230167029-A1 | ABLATION-RESISTANT HIGH-ENTROPY CARBIDE-HIGH-ENTROPY DIBORIDE-SILICON CARBIDE MULTIPHASE CERAMIC AND PREPARATION THEREOF | ZHEJIANG NORMAL UNIVERSITY (CN) | 2023-06-01 | — | — | US | claimed |
| CN-113698209-B | High-entropy diboride-silicon carbide complex phase ceramic, preparation method and application thereof | 安徽工业大学科技园有限公司 | 2023-01-06 | — | — | CN | claimed |
| CN-113698209-A | High-entropy diboride-silicon carbide composite ceramic, and preparation method and application thereof | 安徽工业大学科技园有限公司 | 2021-11-26 | — | — | CN | claimed |
| US-11946157-B2 | Method for depositing boron containing silicon germanium layers | ASM IP HOLDING B.V. (NL) | 2024-04-02 | — | — | US | disclosed |
| CN-116544101-A | Method for forming silicon germanium structure | ASM IP私人控股有限公司 | 2023-08-04 | — | — | CN | disclosed |
| US-20230245888-A1 | METHODS OF FORMING SILICON GERMANIUM STRUCTURES | ASM IP HOLDING B.V. (NL) | 2023-08-03 | — | — | US | disclosed |
| US-20230167029-A1 | ABLATION-RESISTANT HIGH-ENTROPY CARBIDE-HIGH-ENTROPY DIBORIDE-SILICON CARBIDE MULTIPHASE CERAMIC AND PREPARATION THEREOF | ZHEJIANG NORMAL UNIVERSITY (CN) | 2023-06-01 | — | — | US | disclosed |
| US-20230167029-A1 | ABLATION-RESISTANT HIGH-ENTROPY CARBIDE-HIGH-ENTROPY DIBORIDE-SILICON CARBIDE MULTIPHASE CERAMIC AND PREPARATION THEREOF | ZHEJIANG NORMAL UNIVERSITY (CN) | 2023-06-01 | — | — | US | disclosed |
| CN-113698209-B | High-entropy diboride-silicon carbide complex phase ceramic, preparation method and application thereof | 安徽工业大学科技园有限公司 | 2023-01-06 | — | — | CN | disclosed |
| CN-113698209-B | High-entropy diboride-silicon carbide complex phase ceramic, preparation method and application thereof | 安徽工业大学科技园有限公司 | 2023-01-06 | — | — | CN | disclosed |
| CN-113698209-B | High-entropy diboride-silicon carbide complex phase ceramic, preparation method and application thereof | 安徽工业大学科技园有限公司 | 2023-01-06 | — | — | CN | disclosed |
| CN-115369376-A | Method and system for topographically selective deposition | ASM IP私人控股有限公司 | 2022-11-22 | — | — | CN | disclosed |
| CN-115369377-A | Method for depositing boron-containing silicon-germanium layer | ASM IP私人控股有限公司 | 2022-11-22 | — | — | CN | disclosed |
| CN-113698209-A | High-entropy diboride-silicon carbide composite ceramic, and preparation method and application thereof | 安徽工业大学科技园有限公司 | 2021-11-26 | — | — | CN | disclosed |
| CN-113698209-A | High-entropy diboride-silicon carbide composite ceramic, and preparation method and application thereof | 安徽工业大学科技园有限公司 | 2021-11-26 | — | — | CN | disclosed |
| CN-113698209-A | High-entropy diboride-silicon carbide composite ceramic, and preparation method and application thereof | 安徽工业大学科技园有限公司 | 2021-11-26 | — | — | CN | disclosed |
| CN-107021787-A | A kind of preparation method of anti-yaw damper coating | 广东省新材料研究所 | 2017-08-08 | — | — | CN | disclosed |
| US-20030200984-A1 | Highly efficient remote clean process for process chambers in deposition tools | ADVANCED MICRO DEVICES, INC. | 2003-10-30 | — | — | US | disclosed |
| US-6095158-A | Anhydrous HF in-situ cleaning process of semiconductor processing chambers | LAM RESEARCH CORPORATION (US) | 2000-08-01 | — | — | US | disclosed |