SCHEMBL713620

SCHEMBL713620

[Cd].[O]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29656396 0.82
SCHEMBL30229948 0.82
SCHEMBL11741901 0.82
SCHEMBL715985 0.82
SCHEMBL30615160 0.82
SCHEMBL30708105 0.82
SCHEMBL365 0.71
Hydrogen Sulfide SCHEMBL1489270 0.71
SCHEMBL9177548 0.71
SCHEMBL8037345 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115522052-B Method for recovering rare noble metals in spent fuel post-treatment high-level waste liquid 济南大学 2024-06-25 CN claimed
CN-111592040-B Method for removing cadmium in antimony trioxide production 广西华远金属化工有限公司 2023-03-28 CN claimed
CN-113845666-B Porous material of metal organic framework based on naphthalimide, preparation method and application 郑州轻工业大学 2023-02-24 CN claimed
CN-113845666-A Porous material of metal organic framework based on naphthalimide, preparation method and application 郑州轻工业大学 2021-12-28 CN claimed
CN-111592040-A Method for removing cadmium in antimony trioxide production 广西华远金属化工有限公司 2020-08-28 CN claimed
US-20120049079-A1 ELECTRONIC ASSEMBLY GENERAL ELECTRIC COMPANY (US) 2012-03-01 US claimed
CN-100388519-C Method for preparing high quality light-emitting semiconductor thin film on silicon substrate JINGNENG OPTRONICS JIANGXI CO (CN) 2008-05-14 CN claimed
CN-1801500-A Method for preparing high quality light-emitting semiconductor thin film on silicon substrate UNIV NANCHANG (CN) 2006-07-12 CN claimed
JP-57038568-A None JP disclosed
JP-1286254-A None JP disclosed
CN-120790191-A Cadmium-oxygen double-defect composite material for degrading ciprofloxacin and preparation method and application thereof 浙江工业大学 2025-10-17 CN disclosed
CN-120790191-A Cadmium-oxygen double-defect composite material for degrading ciprofloxacin and preparation method and application thereof 浙江工业大学 2025-10-17 CN disclosed
CN-119842310-B Preparation method of flame-retardant, high-refraction and melt-drip-resistant polyurethane coating 烟台大学 2025-05-27 CN disclosed
CN-119842310-A Preparation method of flame-retardant, high-refraction and melt-drip-resistant polyurethane coating 烟台大学 2025-04-18 CN disclosed
US-5652073-A NICKEL/HYDROGEN BATTERY SPACE SYSTEMS/LORAL, INC. (US) 1997-07-29 US disclosed
JP-H01286254-A CADMIUM NEGATIVE ELECTRODE FOR ALKALINE STORAGE BATTERY MATSUSHITA ELECTRIC IND CO LTD 1989-11-17 JP disclosed
EP-0112132-B1 METHOD OF DEPOSITING A HIGHLY CONDUCTIVE, HIGHLY TRANSMISSIVE FILM ENERGY CONVERSION DEVICES, INC. (US) 1989-03-22 EP disclosed
US-4605565-A VACUUM DEPOSITION OF METAL OXIDE USING RADIOFREQUENCY SIGNAL TO FORM IONIZED PLASMA OF METAL AND OXYGEN ENERGY CONVERSION DEVICES, INC. (US) 1986-08-12 US disclosed
EP-0112132-A2 Method of depositing a highly conductive, highly transmissive film ENERGY CONVERSION DEVICES, INC. (US) 1984-06-27 EP disclosed
JP-S5738568-A AIR-TIGHT ALKALI STORAGE BATTERY MATSUSHITA ELECTRIC IND CO LTD 1982-03-03 JP disclosed