⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL703540 | 0.74 | — | — | |
| SCHEMBL19360870 | 0.70 | — | — | |
| SCHEMBL2915478 | 0.70 | — | — | |
| SCHEMBL621000 | 0.70 | — | — | |
| SCHEMBL20434204 | 0.67 | — | — | |
| SCHEMBL704677 | 0.61 | — | — | |
| SCHEMBL704709 | 0.61 | — | — | |
| SCHEMBL263794 | 0.56 | — | — | |
| SCHEMBL11243871 | 0.56 | — | — | |
| SCHEMBL1232506 | 0.56 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113903997-B | Electrolyte, electrochemical device, secondary battery, and assembly | 大金工业株式会社 | 2024-08-30 | — | — | CN | disclosed |
| US-11367902-B2 | Lithium secondary battery including electrolyte containing monofluorosilane compound | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-06-21 | — | — | US | disclosed |
| US-11322780-B2 | Electrolyte solution, electrochemical device, secondary battery, and module | DAIKIN INDUSTRIES, LTD. (JP) | 2022-05-03 | — | — | US | disclosed |
| CN-109496374-B | Electrolyte solution, electrochemical device, secondary battery, and module | 大金工业株式会社 | 2022-05-03 | — | — | CN | disclosed |
| CN-109643826-B | Electrolyte solution, electrochemical device, secondary battery, and module | 大金工业株式会社 | 2022-03-15 | — | — | CN | disclosed |
| CN-113903997-A | Electrolyte solution, electrochemical device, secondary battery, and module | 大金工业株式会社 | 2022-01-07 | — | — | CN | disclosed |
| EP-3483973-B1 | ELECTROLYTE SOLUTION, ELECTROCHEMICAL DEVICE, SECONDARY BATTERY, AND MODULE | DAIKIN IND LTD (JP) | 2021-10-13 | — | — | EP | disclosed |
| EP-3849009-A1 | ELECTROLYTE SOLUTION, ELECTROCHEMICAL DEVICE, SECONDARY BATTERY, AND MODULE | DAIKIN INDUSTRIES, LTD. (JP) | 2021-07-14 | — | — | EP | disclosed |
| US-10547085-B2 | Lithium secondary battery including electrolyte containing monofluorosilane compound | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-01-28 | — | — | US | disclosed |
| US-20190288339-A1 | ELECTROLYTE SOLUTION, ELECTROCHEMICAL DEVICE, SECONDARY BATTERY, AND MODULE | DAIKIN INDUSTRIES, LTD. (JP) | 2019-09-19 | — | — | US | disclosed |
| US-20190214682-A1 | ELECTROLYTE SOLUTION, ELECTROCHEMICAL DEVICE, SECONDARY BATTERY, AND MODULE | DAIKIN INDUSTRIES, LTD. (JP) | 2019-07-11 | — | — | US | disclosed |
| EP-3483973-A1 | ELECTROLYTE SOLUTION, ELECTROCHEMICAL DEVICE, SECONDARY BATTERY, AND MODULE | Daikin Industries, Ltd. (JP) | 2019-05-15 | — | — | EP | disclosed |
| EP-3483974-A1 | ELECTROLYTE SOLUTION, ELECTROCHEMICAL DEVICE, SECONDARY BATTERY, AND MODULE | Daikin Industries, Ltd. (JP) | 2019-05-15 | — | — | EP | disclosed |
| US-20180219258-A1 | LITHIUM SECONDARY BATTERY INCLUDING ELECTROLYTE CONTAINING MONOFLUOROSILANE COMPOUND | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-08-02 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |