⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrogen Sulfide SCHEMBL8984155 | 1.00 | — | — | |
| Hydrogen Sulfide SCHEMBL10586471 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL7526814 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL28613506 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL23405258 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL23242951 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL6658001 | 0.82 | — | — | |
| Phosphine SCHEMBL17091936 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL22390786 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL20915008 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 171 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119481052-A | Battery pole piece, battery diaphragm, electrochemical battery and preparation method | 华为技术有限公司 | 2025-02-18 | — | — | CN | claimed |
| CN-117374376-A | Composite solid electrolyte material, and preparation method and application thereof | 比亚迪股份有限公司 | 2024-01-09 | — | — | CN | claimed |
| CN-116960442-A | Sulfide solid electrolyte material, preparation method thereof, composite positive electrode and battery | 上海轩邑新能源发展有限公司 | 2023-10-27 | — | — | CN | claimed |
| CN-114242942-B | Composite buffer layer with stable anode interface and solid-state lithium metal battery thereof | 厦门大学 | 2023-05-02 | — | — | CN | claimed |
| EP-2901488-B1 | METHODS FOR MANUFACTURING NON-PLANAR SEMICONDUCTOR DEVICES HAVING GERMANIUM-BASED ACTIVE REGIONS WITH A COMBINED RELEASE-ETCH PASSIVATION STEP. | INTEL CORP (US) | 2021-07-21 | — | — | EP | claimed |
| CN-106159200-B | A kind of lithium anode and its preparation and application with protective coating | 中国科学院青岛生物能源与过程研究所 | 2019-01-11 | — | — | CN | claimed |
| CN-105513805-B | Copper cadmium germanium sulphur is nanocrystalline, copper cadmium germanium sulphur is to electrode and the preparation method and application thereof | 上海交通大学 | 2018-09-11 | — | — | CN | claimed |
| CN-105513809-B | Copper cobalt germanium sulphur is nanocrystalline, copper cobalt germanium sulphur is to electrode and the preparation method and application thereof | 上海交通大学 | 2018-09-11 | — | — | CN | claimed |
| CN-104584225-B | Non-planar semiconductor device having germanium-based active region and release etch-passivated surface | 英特尔公司 | 2017-12-15 | — | — | CN | claimed |
| CN-107364836-A | Tin germanium sulfoselenide film and preparation method thereof, electrooptical device | 南京大学 | 2017-11-21 | — | — | CN | claimed |
| CN-104584225-A | Non-planar semiconductor device having germanium-based active region and release etch-passivated surface | INTEL CORP | 2015-04-29 | — | — | CN | claimed |
| US-8716690-B2 | Variable resistor, non-volatile memory device using the same, and methods of fabricating the same | SK Hynic Inc. (KR) | 2014-05-06 | — | — | US | claimed |
| CN-101794860-B | Conducting microchannel memory element and manufacturing method thereof | IND TECH RES INST | 2013-07-10 | — | — | CN | claimed |
| US-20130134374-A1 | VARIABLE RESISTOR, NON-VOLATILE MEMORY DEVICE USING THE SAME, AND METHODS OF FABRICATING THE SAME | KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION (KR) | 2013-05-30 | — | — | US | claimed |
| CN-101794860-A | Conducting microchannel memory element and manufacturing method thereof | IND TECH RES INST | 2010-08-04 | — | — | CN | claimed |
| CN-100550460-C | Utilize the integrated circuit (IC)-components and the manufacturing of the chalcogenide material behind the doping metals | MICRON TECHNOLOGY INC (US) | 2009-10-14 | — | — | CN | claimed |
| CN-100402694-C | Integrated circuit devices and fabrication using metal-doped chalcogenide materials | MICRON TECHNOLOGY INC (US) | 2008-07-16 | — | — | CN | claimed |
| CN-101005114-A | Integrated circuit device and fabrication using metal-doped chalcogenide materials | MICRON TECHNOLOGY INC (US) | 2007-07-25 | — | — | CN | claimed |
| CN-1578848-A | Integrated circuit devices and fabrication using metal-doped chalcogenide materials | MICRON TECHNOLOGY INC (US) | 2005-02-09 | — | — | CN | claimed |
| US-20030001505-A1 | Low-pressure gas discharge lamp with a mercury-free gas filling | KONINKLIJKE PHILIPS ELECTRONICS N.V. (NL) | 2003-01-02 | — | — | US | claimed |