SCHEMBL714101

SCHEMBL714101

[Ge].[S]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Potassium SCHEMBL31463465 0.82
Lithium SCHEMBL31395783 0.82
SCHEMBL31665945 0.82
SCHEMBL10414787 0.82
SCHEMBL9329829 0.82
SCHEMBL11880762 0.82
SCHEMBL7956375 0.82
SCHEMBL10583054 0.82
SCHEMBL3790748 0.82
SCHEMBL31463479 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 93 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119481052-A Battery pole piece, battery diaphragm, electrochemical battery and preparation method 华为技术有限公司 2025-02-18 CN claimed
CN-114242942-B Composite buffer layer with stable anode interface and solid-state lithium metal battery thereof 厦门大学 2023-05-02 CN claimed
CN-114678468-B Phase change memory and manufacturing method thereof 江苏游隼微电子有限公司 2022-07-29 CN claimed
CN-114678468-A Phase change memory and manufacturing method thereof 江苏游隼微电子有限公司 2022-06-28 CN claimed
CN-106159200-B A kind of lithium anode and its preparation and application with protective coating 中国科学院青岛生物能源与过程研究所 2019-01-11 CN claimed
CN-107364836-A Tin germanium sulfoselenide film and preparation method thereof, electrooptical device 南京大学 2017-11-21 CN claimed
CN-105826464-A Formation method of conductive bridging random access memory 中芯国际集成电路制造(上海)有限公司 2016-08-03 CN claimed
CN-105679544-A Copper-manganese-germanium-sulfur counter electrode of dye-sensitized solar cell and preparation method for copper-manganese-germanium-sulfur counter electrode 上海交通大学 2016-06-15 CN claimed
US-8716690-B2 Variable resistor, non-volatile memory device using the same, and methods of fabricating the same SK Hynic Inc. (KR) 2014-05-06 US claimed
CN-101794860-B Conducting microchannel memory element and manufacturing method thereof IND TECH RES INST 2013-07-10 CN claimed
US-20130134374-A1 VARIABLE RESISTOR, NON-VOLATILE MEMORY DEVICE USING THE SAME, AND METHODS OF FABRICATING THE SAME KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION (KR) 2013-05-30 US claimed
CN-101794860-A Conducting microchannel memory element and manufacturing method thereof IND TECH RES INST 2010-08-04 CN claimed
CN-121028352-A Germanium-sulfur mixed long-wave infrared continuous zoom lens with length of 25-75mm 佛山华国光学器材有限公司 2025-11-28 CN disclosed
CN-121028352-A Germanium-sulfur mixed long-wave infrared continuous zoom lens with length of 25-75mm 佛山华国光学器材有限公司 2025-11-28 CN disclosed
US-20250241212-A1 BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-07-24 US disclosed
CN-222964745-U Infrared thermal imaging instrument 武汉酷锘科技有限公司 2025-06-10 CN disclosed
US-20090218567-A1 CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MAKING THE SAME NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) 2009-09-03 US disclosed
CN-101330110-A Light absorption layer material for film solar battery and preparation method thereof UNIV CENTRAL SOUTH (CN) 2008-12-24 CN disclosed
CN-100375727-C Sulfur halogen glass and its production for superfast light switch UNIV WUHAN SCIENCE & ENG (CN) 2008-03-19 CN disclosed
CN-1817810-A Sulfur halogen glass and its production for superfast light switch UNIV WUHAN SCIENCE & ENG (CN) 2006-08-16 CN disclosed