SCHEMBL7142603

SCHEMBL7142603

CC(C)C(=O)CC(=O)C(C)C.[Ru]

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 1/20 0.35
CYP2C19 P33261 1/20 0.35
MMP1 P03956 3/20 0.35
MMP8 P22894 2/20 0.35
MMP2 P08253 2/20 0.33
CA2 P00918 2/20 0.33
ALDH1A1 P00352 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
CA12 O43570 1/20 0.33
CA1 P00915 1/20 0.33
MMP9 P14780 1/20 0.33
CA9 Q16790 1/20 0.33
MMP3 P08254 1/20 0.33
TP53 P04637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL181668 0.96 CYP2D6 (0.36) CYP2D6CYP2C19MMP1MMP8MMP2
SCHEMBL29035568 0.93 CYP2D6 (0.35) CYP2D6CYP2C19MMP1MMP8MMP2
SCHEMBL28708081 0.93 CYP2D6 (0.35) CYP2D6CYP2C19MMP1MMP8MMP2
SCHEMBL28745252 0.93 CYP2D6 (0.35) CYP2D6CYP2C19MMP1MMP8MMP2
SCHEMBL30534794 0.93 CYP2D6 (0.35) CYP2D6CYP2C19MMP1MMP8MMP2
SCHEMBL28426602 0.93 CYP2D6 (0.35) CYP2D6CYP2C19MMP1MMP8MMP2
SCHEMBL9282807 0.93 CYP2D6 (0.35) CYP2D6CYP2C19MMP1MMP8MMP2
SCHEMBL30534795 0.93 CYP2D6 (0.35) CYP2D6CYP2C19MMP1MMP8MMP2
SCHEMBL30534812 0.93 CYP2D6 (0.35) CYP2D6CYP2C19MMP1MMP8MMP2
SCHEMBL28680358 0.93 CYP2D6 (0.35) CYP2D6CYP2C19MMP1MMP8MMP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
JP-9246214-A None JP disclosed
US-6515843-B2 Semiconductor capacitive device FUJITSU LIMITED (JP) 2003-02-04 US disclosed
US-6271077-B1 Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same FUJITSU LIMITED (JP) 2001-08-07 US disclosed
US-5874364-A FORMING RUTHENIUM OR RUTHENIUM OXIDE FILM BY VAPOR DEPOSITION OF RUTHENIUM, 2,5-DIMETHYL-3,5-HEPTANEDIONE COMPLEX FUJITSU LIMITED (JP) 1999-02-23 US disclosed
JP-H09246214-A THIN FILM FORMATION, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF FUJITSU LTD 1997-09-19 JP disclosed