SCHEMBL716346

SCHEMBL716346

[O-2].[O-2].[O-2].[Pb+2].[Ti+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31474378 1.00
SCHEMBL22673 0.87
SCHEMBL10519575 0.87
SCHEMBL8203672 0.82
SCHEMBL9623134 0.82
SCHEMBL18984675 0.82
SCHEMBL93246 0.82
SCHEMBL4251926 0.82
SCHEMBL9998309 0.82
SCHEMBL11058166 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 343 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260068547-A1 MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE APPLIED MATERIALS, INC. (US) 2026-03-05 US claimed
US-20260068546-A1 MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE APPLIED MATERIALS, INC. (US) 2026-03-05 US claimed
CN-119365066-A Metal-insulating layer-metal capacitor and manufacturing method thereof 联华电子股份有限公司 2025-01-24 CN claimed
US-20240079183-A1 DIELECTRIC CAPACITOR FORMED OF A DIELECTRIC-COATED ELECTRICALLY CONDUCTIVE POROUS SCAFFOLD FILLED WITH METAL THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 2024-03-07 US claimed
CN-108701481-B Polarized gate stacked SRAM 太浩研究有限公司 2023-05-30 CN claimed
US-11515463-B1 Transparent electrostrictive actuators META PLATFORMS TECHNOLOGIES, LLC (US) 2022-11-29 US claimed
US-10559349-B2 Polarization gate stack SRAM INTEL CORPORATION (US) 2020-02-11 US claimed
US-20190027211-A1 POLARIZATION GATE STACK SRAM TAHOE RESEARCH, LTD. (IE) 2019-01-24 US claimed
US-20190019551-A1 NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE SK Hynix Inc. (KR) 2019-01-17 US claimed
WO-2017171846-A1 POLARIZATION GATE STACK SRAM INTEL CORPORATION (US) 2017-10-05 WO claimed
US-20050194625-A1 Semiconductor device, method of fabricating the same, and memory device NEC ELECTRONICS CORPORATION (JP) 2005-09-08 US claimed
US-6586738-B2 Electromagnetic radiation detectors having a micromachined electrostatic chopper device MCNC 2003-07-01 US claimed
US-20020148964-A1 Electromagnetic radiation detectors having a micromachined electrostatic chopper device MCNC 2002-10-17 US claimed
WO-2002073708-A2 ELECTROLUMINESCENT DISPLAY DEVICE UNIVERSITY OF CINCINNATI (US) 2002-09-19 WO claimed
US-6432725-B1 USING PLASMA INFINEON TECHNOLOGIES AG 2002-08-13 US claimed
EP-1116256-A1 VACUUM FIELD-EFFECT DEVICE AND FABRICATION PROCESS THEREFOR Advanced Vision Technologies, Inc. (US) 2001-07-18 EP claimed
WO-2001008193-A1 VACUUM FIELD-EFFECT DEVICE AND FABRICATION PROCESS THEREFOR ADVANCED VISION TECHNOLOGIES, INC. (US) 2001-02-01 WO claimed
US-5659195-A CMOS integrated microsensor with a precision measurement circuit THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 1997-08-19 US claimed
US-5656823-A Amorphous semiconductor thin film light emitting diode CHULALONGKORN UNIVERSITY (TH) 1997-08-12 US claimed
WO-1996042111-A1 CMOS INTEGRATED MICROSENSOR WITH A PRECISION MEASUREMENT CIRCUIT THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 1996-12-27 WO claimed