SCHEMBL7164635

SCHEMBL7164635

Cc1ccccc1S(=O)(=O)O.c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MYC P01106 1/20 0.43
TSHR P16473 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
SLC1A3 P43003 1/20 0.39
SLC1A2 P43004 1/20 0.39
SLC1A1 P43005 1/20 0.39
LMNA P02545 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
RAPGEF4 Q8WZA2 1/20 0.38
KMT2A Q03164 2/20 0.38
SUMO2 P61956 1/20 0.37
SUMO1 P63165 1/20 0.37
SENP7 Q9BQF6 1/20 0.37
SENP3 Q9H4L4 1/20 0.37
SENP2 Q9HC62 1/20 0.37
SENP1 Q9P0U3 1/20 0.37
HSD11B1 P28845 1/20 0.36
CYP2C9 P11712 2/20 0.36
CYP1A2 P05177 1/20 0.36
CYP2C19 P33261 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6915063 0.88 MYC (0.52) MYCTSHRSMN1; SMN2SLC1A3SLC1A2
Benzene SCHEMBL8718895 0.88 MYC (0.52) MYCTSHRSMN1; SMN2SLC1A3SLC1A2
Benzene SCHEMBL28093278 0.86 MYC (0.50) MYCTSHRSMN1; SMN2SLC1A3SLC1A2
SCHEMBL1748 0.86 MYC (0.53) MYCTSHRSMN1; SMN2SLC1A3SLC1A2
SCHEMBL29392580 0.86 MYC (0.53) MYCTSHRSMN1; SMN2SLC1A3SLC1A2
Lithium SCHEMBL11112963 0.84 MYC (0.52) MYCTSHRSMN1; SMN2SLC1A3SLC1A2
SCHEMBL8715920 0.84 MYC (0.52) MYCTSHRSMN1; SMN2SLC1A3SLC1A2
SCHEMBL948871 0.84 MYC (0.52) MYCTSHRSMN1; SMN2SLC1A3SLC1A2
Water SCHEMBL3917281 0.84 MYC (0.52) MYCTSHRSMN1; SMN2SLC1A3SLC1A2
SCHEMBL6916771 0.84 MYC (0.52) MYCTSHRSMN1; SMN2SLC1A3SLC1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6566036-B2 Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization NEC ELECTRONICS CORPORATION (JP) 2003-05-20 US claimed
US-20010009749-A1 Chemically amplified resist NEC CORPORATION 2001-07-26 US claimed
JP-11307524-A None JP disclosed
US-6566036-B2 Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization NEC ELECTRONICS CORPORATION (JP) 2003-05-20 US disclosed
US-20010009749-A1 Chemically amplified resist NEC CORPORATION 2001-07-26 US disclosed
JP-H11307524-A POSITIVE TYPE RADIATION SENSITIVE COMPOSITION AND PATTERN FORMATION USING THE SAME HITACHI LTD 1999-11-05 JP disclosed