⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Charcoal, Activated SCHEMBL2388451 | 0.82 | — | — | |
| SCHEMBL30899520 | 0.82 | — | — | |
| SCHEMBL5706295 | 0.82 | — | — | |
| SCHEMBL9334502 | 0.71 | — | — | |
| SCHEMBL9156081 | 0.71 | — | — | |
| SCHEMBL18695 | 0.71 | — | — | |
| SCHEMBL1560648 | 0.71 | — | — | |
| SCHEMBL1962877 | 0.71 | — | — | |
| SCHEMBL1061 | 0.71 | — | — | |
| SCHEMBL3164744 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-100517618-C | Semiconductor device and its making method | SEMICONDUCTOR MFG INT SHANGHAI (CN) | 2009-07-22 | — | — | CN | claimed |
| CN-101197285-A | Semiconductor device and its making method | SEMICONDUCTOR MFG INT SHANGHAI (CN) | 2008-06-11 | — | — | CN | claimed |
| EP-4278373-B1 | PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL | APPLIED MATERIALS INC (US) | 2026-04-01 | — | — | EP | disclosed |
| CN-119059823-A | SiBCNHf ceramic precursor with low viscosity and high ceramic yield, and preparation method and application thereof | 中国科学院化学研究所 | 2024-12-03 | — | — | CN | disclosed |
| US-20240304422-A1 | PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL | APPLIED MATERIALS, INC. | 2024-09-12 | — | — | US | disclosed |
| US-20240170263-A1 | PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL | APPLIED MATERIALS, INC. | 2024-05-23 | — | — | US | disclosed |
| CN-114853930-B | Synthesis of NNO-coordinated titanium zirconium hafnium metal catalyst and application of NNO-coordinated titanium zirconium hafnium metal catalyst in preparation of polyolefin elastomer | 青岛科技大学 | 2024-03-01 | — | — | CN | disclosed |
| CN-117362329-A | Preparation method and application of NNO tridentate coordination metal catalyst based on quinoline skeleton | 青岛科技大学 | 2024-01-09 | — | — | CN | disclosed |
| US-11854770-B2 | Plasma processing with independent temperature control | APPLIED MATERIALS, INC. (US) | 2023-12-26 | — | — | US | disclosed |
| CN-116848614-A | Plasma processing with independent temperature control | 应用材料公司 | 2023-10-03 | — | — | CN | disclosed |
| CN-110581070-B | Semiconductor device with a plurality of semiconductor chips | 株式会社半导体能源研究所 | 2022-12-20 | — | — | CN | disclosed |
| US-20060063346-A1 | Method of forming a layer and method of forming a capacitor of a semiconductor device having the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-03-23 | — | — | US | disclosed |
| EP-1613790-A1 | METHOD FOR HAFNIUM NITRIDE DEPOSITION | Applied Materials, Inc. (US) | 2006-01-11 | — | — | EP | disclosed |
| CN-1664164-A | Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same | MITSUBISHI MATERIALS CORP (JP) | 2005-09-07 | — | — | CN | disclosed |
| US-20050153571-A1 | Nitridation of high-k dielectric films | AVIZA TECHNOLOGY, INC. | 2005-07-14 | — | — | US | disclosed |
| WO-2005050715-A2 | NITRIDATION OF HIGH-K DIELECTRIC FILMS | AVIZA TECHNOLOGY, INC. (US) | 2005-06-02 | — | — | WO | disclosed |
| US-20050065358-A1 | Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same | MITSUBISHI MATERIALS CORPORATION (JP) | 2005-03-24 | — | — | US | disclosed |
| WO-2004094691-A1 | METHOD FOR HAFNIUM NITRIDE DEPOSITION | APPLIED MATERIALS, INC. (US) | 2004-11-04 | — | — | WO | disclosed |
| CN-1542740-A | Magnetoresistive sensor having a high resistance soft magnetic layer between sensor stack and shield | ƽ | 2004-11-03 | — | — | CN | disclosed |
| US-20040198069-A1 | Method for hafnium nitride deposition | APPLIED MATERIALS, INC. | 2004-10-07 | — | — | US | disclosed |