⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31105910 | 0.87 | — | — | |
| SCHEMBL226462 | 0.82 | — | — | |
| SCHEMBL5574346 | 0.82 | — | — | |
| SCHEMBL6474597 | 0.82 | — | — | |
| SCHEMBL184679 | 0.82 | — | — | |
| SCHEMBL30232655 | 0.82 | — | — | |
| SCHEMBL716265 | 0.82 | — | — | |
| SCHEMBL11969921 | 0.82 | — | — | |
| SCHEMBL300756 | 0.82 | — | — | |
| SCHEMBL868855 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118814112-B | Composite member and method for producing same | 湖南唐力新材料科技有限公司 | 2025-03-25 | — | — | CN | claimed |
| CN-118814112-A | Composite member and method for producing same | 湖南唐力新材料科技有限公司 | 2024-10-22 | — | — | CN | claimed |
| CN-101930915-B | Preparation method of molybdenum-aluminum-nitrogen metal grid | INST OF MICROELECTRONICS CAS | 2012-05-23 | — | — | CN | claimed |
| CN-101930915-A | Preparation method of molybdenum-aluminum-nitrogen metal grid | INST OF MICROELECTRONICS CAS | 2010-12-29 | — | — | CN | claimed |
| CN-118814112-B | Composite member and method for producing same | 湖南唐力新材料科技有限公司 | 2025-03-25 | — | — | CN | disclosed |
| CN-118814112-A | Composite member and method for producing same | 湖南唐力新材料科技有限公司 | 2024-10-22 | — | — | CN | disclosed |
| CN-101930915-B | Preparation method of molybdenum-aluminum-nitrogen metal grid | INST OF MICROELECTRONICS CAS | 2012-05-23 | — | — | CN | disclosed |
| CN-101930915-B | Preparation method of molybdenum-aluminum-nitrogen metal grid | INST OF MICROELECTRONICS CAS | 2012-05-23 | — | — | CN | disclosed |
| CN-101930915-B | Preparation method of molybdenum-aluminum-nitrogen metal grid | INST OF MICROELECTRONICS CAS | 2012-05-23 | — | — | CN | disclosed |
| US-20120049107-A1 | SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING PROCESS AND METHOD OF FORMING PHASE CHANGE MEMORY DEVICE USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-03-01 | — | — | US | disclosed |
| CN-101930915-A | Preparation method of molybdenum-aluminum-nitrogen metal grid | INST OF MICROELECTRONICS CAS | 2010-12-29 | — | — | CN | disclosed |
| CN-101930915-A | Preparation method of molybdenum-aluminum-nitrogen metal grid | INST OF MICROELECTRONICS CAS | 2010-12-29 | — | — | CN | disclosed |
| CN-101930915-A | Preparation method of molybdenum-aluminum-nitrogen metal grid | INST OF MICROELECTRONICS CAS | 2010-12-29 | — | — | CN | disclosed |