SCHEMBL7192002

SCHEMBL7192002

[Te-2].[Te-2].[Zr+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30084631 1.00
SCHEMBL29675513 1.00
SCHEMBL17686601 0.82
SCHEMBL28202775 0.71
SCHEMBL30753794 0.71
SCHEMBL29354192 0.71
SCHEMBL38654827 0.71
SCHEMBL23794408 0.50
SCHEMBL7197453 0.50
SCHEMBL2119750 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 125 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260068546-A1 MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE APPLIED MATERIALS, INC. (US) 2026-03-05 US claimed
US-20260068547-A1 MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE APPLIED MATERIALS, INC. (US) 2026-03-05 US claimed
US-12404411-B2 Conductive paste based on nano-hybrid materials UNIVERSITY OF SOUTH FLORIDA (US) 2025-09-02 US claimed
CN-119764802-A Topological insulator zirconium telluride-graphene-based vertical heterojunction rectifying antenna and preparation method thereof 中国科学院上海技术物理研究所 2025-04-04 CN claimed
US-20240339543-A1 APPARATUS AND ELECTRONIC DEVICES INCLUDING TRANSISTORS COMPRISING TWO-DIMENSIONAL MATERIALS MICRON TECHNOLOGY INC (US) 2024-10-10 US claimed
CN-118448454-A Transistors comprising two-dimensional materials and related semiconductor devices, systems, and methods 美光科技公司 2024-08-06 CN claimed
CN-118376577-A Detection device and detection method based on solid higher harmonic 中国科学院物理研究所 2024-07-23 CN claimed
US-12015089-B2 Transistors comprising two-dimensional materials and related memory cells and electronic devices MICRON TECHNOLOGY, INC. (US) 2024-06-18 US claimed
CN-111952448-B Multilayer phase change film based on germanium antimony tellurium and IV group telluride alternate stacking and application thereof 西安交通大学 2024-05-07 CN claimed
US-20240043695-A1 CONDUCTIVE PASTE BASED ON NANO-HYBRID MATERIALS UNIVERSITY OF SOUTH FLORIDA 2024-02-08 US claimed
US-20210380814-A1 CONDUCTIVE PASTE BASED ON NANO-HYBRID MATERIALS UNIVERSITY OF SOUTH FLORIDA 2021-12-09 US claimed
CN-113764820-A Preparation method of composite high-temperature-resistant lithium battery diaphragm material 广东九彩新材料有限公司 2021-12-07 CN claimed
CN-113764825-A Lithium battery diaphragm material and preparation method thereof 广东九彩新材料有限公司 2021-12-07 CN claimed
CN-109285891-B Graphene two-dimensional heterojunction flexible device structure and preparation method thereof 福建翔丰华新能源材料有限公司 2021-12-07 CN claimed
CN-111952448-A Multilayer phase change film based on alternate stacking of germanium antimony tellurium and IV-group telluride and application thereof 西安交通大学 2020-11-17 CN claimed
WO-2020082074-A1 CONDUCTIVE PASTE BASED ON NANO-HYBRID MATERIALS RAM MANOJ KUMAR (US) 2020-04-23 WO claimed
US-10453620-B2 Perovskite composite structure WINBOND ELECTRONICS CORP. (TW) 2019-10-22 US claimed
US-20180375282-A1 TWO-DIMENSIONAL SEMICONDUCTOR SATURABLE ABSORBER MIRROR AND FABRICATION METHOD, AND PULSE FIBER LASER UNIV SHENZHEN (CN) 2018-12-27 US claimed
US-20180240607-A1 PEROVSKITE COMPOSITE STRUCTURE WINBOND ELECTRONICS CORP. (TW) 2018-08-23 US claimed
US-6372681-B1 METALLOCENE OF TRANSITION METAL AND; METAL OXIDE, SULFIDE, PHOSPHIDE, CARBIDE, NITRIDE, AND/OR SELENIDE; ORGANOALKALINE EARTH OR ZINC COMPOUND; AND ORGANOALUMINUM COMPOUND TOSOH CORPORATION (JP) 2002-04-16 US claimed