⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Charcoal, Activated SCHEMBL2400332 | 0.71 | — | — | |
| Methane SCHEMBL23853849 | 0.71 | — | — | |
| SCHEMBL31324312 | 0.71 | — | — | |
| SCHEMBL38654827 | 0.71 | — | — | |
| Hydrochloric Acid SCHEMBL1614660 | 0.50 | — | — | |
| SCHEMBL314563 | 0.50 | — | — | |
| Bromide SCHEMBL9351108 | 0.50 | — | — | |
| SCHEMBL19837258 | 0.50 | — | — | |
| SCHEMBL7199395 | 0.50 | — | — | |
| SCHEMBL7193621 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118645632-A | Composite current collector, preparation method thereof and battery | 江阴纳力新材料科技有限公司 | 2024-09-13 | — | — | CN | claimed |
| CN-118448454-A | Transistors comprising two-dimensional materials and related semiconductor devices, systems, and methods | 美光科技公司 | 2024-08-06 | — | — | CN | claimed |
| CN-117779200-A | Niobium ditelluride with bidirectional torsion structure, preparation method and application | 北京科技大学 | 2024-03-29 | — | — | CN | claimed |
| CN-117470912-A | Ultrasensitive nanopore structure, chip, analysis device, amino acid and protein detection method and application | 浙江大学 | 2024-01-30 | — | — | CN | claimed |
| EP-2715778-B1 | METHOD OF TRANSFERRING THIN FILMS | NAT UNIV SINGAPORE (SG) | 2023-06-07 | — | — | EP | claimed |
| CN-218918895-U | Semiconductor device with a semiconductor element having a plurality of electrodes | 瑞砻科技股份有限公司 | 2023-04-25 | — | — | CN | claimed |
| CN-114956180-B | Method for realizing transition metal sulfide phase transition | 西安交通大学 | 2023-03-21 | — | — | CN | claimed |
| CN-115566072-A | Semiconductor device and method for manufacturing the same | 瑞砻科技股份有限公司 | 2023-01-03 | — | — | CN | claimed |
| CN-114975687-A | Two-dimensional photovoltaic device based on ideal Schottky contact and preparation method thereof | 华中科技大学 | 2022-08-30 | — | — | CN | claimed |
| CN-114956180-A | Method for realizing transition metal sulfide phase transition | 西安交通大学 | 2022-08-30 | — | — | CN | claimed |
| CN-109698240-B | Thin film transistor including two-dimensional semiconductor and display device including the same | 乐金显示有限公司 | 2022-06-14 | — | — | CN | claimed |
| CN-109285891-B | Graphene two-dimensional heterojunction flexible device structure and preparation method thereof | 福建翔丰华新能源材料有限公司 | 2021-12-07 | — | — | CN | claimed |
| CN-112736637-A | Saturable absorber based on niobium ditelluride, preparation method and mode-locked fiber laser manufactured by saturable absorber | 广东工业大学 | 2021-04-30 | — | — | CN | claimed |
| US-10388739-B2 | Thin-film transistor including two-dimensional semiconductor and display apparatus including the same | LG DISPLAY CO., LTD. (KR) | 2019-08-20 | — | — | US | claimed |
| US-20190123149-A1 | THIN-FILM TRANSISTOR INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR AND DISPLAY APPARATUS INCLUDING THE SAME | LG DISPLAY CO., LTD. (KR) | 2019-04-25 | — | — | US | claimed |
| US-9748371-B2 | Transition metal dichalcogenide semiconductor assemblies | INTEL CORPORATION (US) | 2017-08-29 | — | — | US | claimed |
| EP-3120384-A1 | TRANSITION METAL DICHALCOGENIDE SEMICONDUCTOR ASSEMBLIES | Intel Corporation (US) | 2017-01-25 | — | — | EP | claimed |
| US-20170012117-A1 | TRANSITION METAL DICHALCOGENIDE SEMICONDUCTOR ASSEMBLIES | INTEL CORPORATION (US) | 2017-01-12 | — | — | US | claimed |
| WO-2015142358-A1 | TRANSITION METAL DICHALCOGENIDE SEMICONDUCTOR ASSEMBLIES | INTEL CORPORATION (US) | 2015-09-24 | — | — | WO | claimed |
| US-6372681-B1 | METALLOCENE OF TRANSITION METAL AND; METAL OXIDE, SULFIDE, PHOSPHIDE, CARBIDE, NITRIDE, AND/OR SELENIDE; ORGANOALKALINE EARTH OR ZINC COMPOUND; AND ORGANOALUMINUM COMPOUND | TOSOH CORPORATION (JP) | 2002-04-16 | — | — | US | claimed |