SCHEMBL7201664

SCHEMBL7201664

CCCCCCCCC1[CH]CCCC1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.39
CYP1A2 P05177 3/20 0.39
ALDH1A1 P00352 1/20 0.38
NAAA Q02083 3/20 0.37
CHRNB2 P17787 1/20 0.35
CHRNA7 P36544 1/20 0.35
CHRNA4 P43681 1/20 0.35
PSMB11 A5LHX3 1/20 0.32
PSMA7 O14818 1/20 0.32
PSMB1 P20618 1/20 0.32
PSMA1 P25786 1/20 0.32
PSMA2 P25787 1/20 0.32
PSMA3 P25788 1/20 0.32
PSMA4 P25789 1/20 0.32
PSMB8 P28062 1/20 0.32
PSMB9 P28065 1/20 0.32
PSMA5 P28066 1/20 0.32
PSMB4 P28070 1/20 0.32
PSMB6 P28072 1/20 0.32
PSMB5 P28074 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9948824 1.00 EPHX1 (0.39) EPHX1CYP1A2ALDH1A1NAAACHRNB2
SCHEMBL5688099 1.00 EPHX1 (0.39) EPHX1CYP1A2ALDH1A1NAAACHRNB2
SCHEMBL9979248 1.00 EPHX1 (0.39) EPHX1CYP1A2ALDH1A1NAAACHRNB2
SCHEMBL9949480 1.00 EPHX1 (0.39) EPHX1CYP1A2ALDH1A1NAAACHRNB2
SCHEMBL9950636 1.00 EPHX1 (0.39) EPHX1CYP1A2ALDH1A1NAAACHRNB2
SCHEMBL9980541 1.00 EPHX1 (0.39) EPHX1CYP1A2ALDH1A1NAAACHRNB2
SCHEMBL9591949 0.98 CYP1A2 (0.40) EPHX1CYP1A2ALDH1A1NAAACHRNB2
SCHEMBL4450962 0.94 EPHX1 (0.41) EPHX1CYP1A2ALDH1A1NAAACHRNB2
SCHEMBL9214351 0.94 EPHX1 (0.41) EPHX1CYP1A2ALDH1A1NAAACHRNB2
SCHEMBL9474195 0.94 EPHX1 (0.41) EPHX1CYP1A2ALDH1A1NAAACHRNB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6602647-B2 Photo acid generator with high transparency and excellent heat stability in a photoresist for lithography using far ultraviolet light, especially light of ArF excimer consists of a cyclic sulfonium compound with 2-oxo group NEC CORPORATION (JP) 2003-08-05 US disclosed
US-20020045122-A1 Sulfonium salt compound and resist composition and pattern forming method using the same NEC CORPORATION 2002-04-18 US disclosed
EP-1113334-A1 Sulfonium salt compound, resist composition comprising the same and pattern forming method using the composition NEC CORPORATION (JP) 2001-07-04 EP disclosed