⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7747756 | 1.00 | — | — | |
| SCHEMBL16280404 | 1.00 | — | — | |
| SCHEMBL2976912 | 1.00 | — | — | |
| Zinc Ion SCHEMBL7649713 | 0.87 | — | — | |
| SCHEMBL5016237 | 0.82 | — | — | |
| SCHEMBL4537170 | 0.82 | — | — | |
| SCHEMBL7545738 | 0.82 | — | — | |
| SCHEMBL7544515 | 0.82 | — | — | |
| SCHEMBL1759642 | 0.82 | — | — | |
| SCHEMBL1759637 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2889 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122095788-A | Etching method and method for manufacturing semiconductor device | — | 2026-05-26 | — | — | CN | claimed |
| CN-115440594-B | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2026-05-12 | — | — | CN | claimed |
| US-12628415-B2 | Post-replacement metal gate (RMG) gate cut for performance enhanced FinFET | QUALCOMM INCORPORATED (US) | 2026-05-12 | — | — | US | claimed |
| US-20260107528-A1 | NANOSHEET SEMICONDUCTOR DEVICE WITH AIR INNER SPACER AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-16 | — | — | US | claimed |
| US-12604508-B2 | Semiconductor device having side spacer patterns | SK Hynix Inc. (KR) | 2026-04-14 | — | — | US | claimed |
| US-20260090089-A1 | MULTI-GATE DEVICE STRUCTURE AND METHODS THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-03-26 | — | — | US | claimed |
| CN-115188798-B | Semiconductor structure, forming method thereof and transistor | 中芯国际集成电路制造(上海)有限公司 | 2026-02-27 | — | — | CN | claimed |
| US-12538548-B2 | Method of manufacturing a semiconductor device and a semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-27 | — | — | US | claimed |
| US-12538570-B2 | Reduction of gate-drain capacitance | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-01-27 | — | — | US | claimed |
| US-20260026048-A1 | GATE-ALL-AROUND DEVICES AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-01-22 | — | — | US | claimed |
| US-20050104139-A1 | Method of forming fet with T-shaped gate | GLOBALFOUNDRIES U.S. INC. | 2005-05-19 | — | — | US | claimed |
| US-20050085092-A1 | Multi-layer dielectric containing diffusion barrier material | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2005-04-21 | — | — | US | claimed |
| US-6872610-B1 | Method for preventing polysilicon mushrooming during selective epitaxial processing | TEXAS INSTRUMENTS INCORPORATED (US) | 2005-03-29 | — | — | US | claimed |
| WO-2004102635-A9 | METHODS FOR PRESERVING STRAINED SEMICONDUCTOR LAYERS DURING OXIDE LAYER FORMATION | AMBERWAVE SYSTEMS CORP (US) | 2005-02-03 | — | — | WO | claimed |
| US-6800910-B2 | FinFET device incorporating strained silicon in the channel region | ADVANCED MICRO DEVICES, INC. | 2004-10-05 | — | — | US | claimed |
| US-20040092051-A1 | Methods for preserving strained semiconductor substrate layers during CMOS processing | AMBERWAVE SYSTEMS CORPORATION | 2004-05-13 | — | — | US | claimed |
| WO-2004032246-A1 | FINFET HAVING IMPROVED CARRIER MOBILITY AND METHOD OF ITS FORMATION | ADVANCED MICRO DEVICES, INC. (US) | 2004-04-15 | — | — | WO | claimed |
| US-20040061178-A1 | Finfet having improved carrier mobility and method of its formation | ADVANCED MICRO DEVICES INC. | 2004-04-01 | — | — | US | claimed |
| EP-1334512-A1 | FET WITH NOTCHED GATE AND METHOD OF MANUFACTURING THE SAME | International Business Machines Corporation (US) | 2003-08-13 | — | — | EP | claimed |
| WO-2002041383-A1 | FET WITH NOTCHED GATE AND METHOD OF MANUFACTURING THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2002-05-23 | — | — | WO | claimed |