⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL991662 | 0.89 | — | — | |
| SCHEMBL28116336 | 0.80 | — | — | |
| SCHEMBL29263526 | 0.80 | — | — | |
| SCHEMBL27894207 | 0.80 | — | — | |
| SCHEMBL2679154 | 0.80 | — | — | |
| SCHEMBL28723690 | 0.80 | — | — | |
| SCHEMBL28716406 | 0.80 | — | — | |
| SCHEMBL22574487 | 0.80 | — | — | |
| SCHEMBL20557681 | 0.80 | — | — | |
| SCHEMBL27861195 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122069712-A | Semiconductor device and method for manufacturing the same | 三星电子株式会社 | 2026-05-19 | — | — | CN | claimed |
| CN-122069712-A | Semiconductor device and method for manufacturing the same | 三星电子株式会社 | 2026-05-19 | — | — | CN | disclosed |
| CN-118660455-A | Single word line gain cell | 美光科技公司 | 2024-09-17 | — | — | CN | disclosed |
| CN-118553687-A | Microelectronic device package assembly including stiffener device and related microelectronic device and electronic system | 美光科技公司 | 2024-08-27 | — | — | CN | disclosed |
| CN-118538694-A | Microelectronic device including through-silicon via and related memory device and electronic system | 美光科技公司 | 2024-08-23 | — | — | CN | disclosed |
| CN-118472029-A | Field effect transistor, manufacturing method thereof and memory | 北京超弦存储器研究院 | 2024-08-09 | — | — | CN | disclosed |
| CN-118472017-A | Field effect transistor, manufacturing method thereof and memory | 北京超弦存储器研究院 | 2024-08-09 | — | — | CN | disclosed |
| CN-118368887-A | Semiconductor memory device and method of manufacturing the same | 三星电子株式会社 | 2024-07-19 | — | — | CN | disclosed |
| CN-116230765-B | MOS tube, memory and preparation method thereof | 北京超弦存储器研究院 | 2024-03-15 | — | — | CN | disclosed |
| CN-117672299-A | Microelectronic device and electronic system | 美光科技公司 | 2024-03-08 | — | — | CN | disclosed |
| CN-116916656-A | Microelectronic devices including interconnects, and related memory devices and electronic systems | 美光科技公司 | 2023-10-20 | — | — | CN | disclosed |
| CN-116801634-A | Microelectronic devices including stair-step structures, and related methods, memory devices, and electronic systems | 美光科技公司 | 2023-09-22 | — | — | CN | disclosed |
| CN-116779614-A | Inverter, associated memory device and electronic system | 美光科技公司 | 2023-09-19 | — | — | CN | disclosed |
| CN-116744690-A | Method of forming a microelectronic device, and related microelectronic device, memory device, and electronic system | 美光科技公司 | 2023-09-12 | — | — | CN | disclosed |
| CN-116669427-A | Electronic devices including pillars containing memory material, and related memory devices, systems, and methods | 美光科技公司 | 2023-08-29 | — | — | CN | disclosed |
| CN-116472789-A | Method of forming a microelectronic device, related microelectronic device, memory device, and electronic system | 美光科技公司 | 2023-07-21 | — | — | CN | disclosed |
| CN-116326238-A | Method of forming a microelectronic device, related microelectronic device, memory device, and electronic system | 美光科技公司 | 2023-06-23 | — | — | CN | disclosed |
| CN-116230765-A | MOS tube, memory and preparation method thereof | 北京超弦存储器研究院 | 2023-06-06 | — | — | CN | disclosed |
| US-8765028-B2 | Composition for oxide thin film, method of preparing the composition, method of forming the oxide thin film, and electronic device using the composition | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2014-07-01 | — | — | US | disclosed |
| US-20120049181-A1 | COMPOSITION FOR OXIDE THIN FILM, METHOD OF PREPARING THE COMPOSITION, METHOD OF FORMING THE OXIDE THIN FILM, AND ELECTRONIC DEVICE USING THE COMPOSITION | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2012-03-01 | — | — | US | disclosed |