⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Arsenic SCHEMBL10622004 | 0.94 | — | — | |
| SCHEMBL10622003 | 0.94 | — | — | |
| SCHEMBL26624 | 0.76 | — | — | |
| SCHEMBL1740294 | 0.76 | — | — | |
| SCHEMBL3314 | 0.76 | — | — | |
| SCHEMBL384941 | 0.68 | — | — | |
| Iodide SCHEMBL6470403 | 0.68 | — | — | |
| Arsenic SCHEMBL9006140 | 0.68 | — | — | |
| SCHEMBL2933743 | 0.68 | — | — | |
| Phosphine SCHEMBL9469513 | 0.68 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112531050-B | Device with improved transverse SAM type APD edge electric field gathering effect and preparation method thereof | 南京大学 | 2022-03-25 | — | — | CN | claimed |
| CN-112531050-A | Device with improved transverse SAM type APD edge electric field gathering effect and preparation method thereof | 南京大学 | 2021-03-19 | — | — | CN | claimed |
| CN-113299805-B | UV-LED based on asymmetric quantum well structure and preparation method thereof | 南京大学 | 2022-09-23 | — | — | CN | disclosed |
| CN-112531050-B | Device with improved transverse SAM type APD edge electric field gathering effect and preparation method thereof | 南京大学 | 2022-03-25 | — | — | CN | disclosed |
| CN-113299805-A | UV-LED based on asymmetric quantum well structure and preparation method thereof | 南京大学 | 2021-08-24 | — | — | CN | disclosed |
| CN-112531050-A | Device with improved transverse SAM type APD edge electric field gathering effect and preparation method thereof | 南京大学 | 2021-03-19 | — | — | CN | disclosed |
| CN-102222742-A | Quantum well luminous tube epitaxial wafer and growth method thereof | ZHEJIANG ORIENT CRYSTAL OPTICS CO LTD | 2011-10-19 | — | — | CN | disclosed |
| US-6627472-B2 | Semiconductor laser producing method | ROHM CO., LTD. (JP) | 2003-09-30 | — | — | US | disclosed |
| US-20020016014-A1 | Semiconductor laser producing method | ROHM CO., LTD. (JP) | 2002-02-07 | — | — | US | disclosed |