SCHEMBL72367

SCHEMBL72367

C=C(C)C(=O)Oc1cccc2c(O)cccc12

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 13/20 0.57
ESR2 Q92731 13/20 0.57
GAA P10253 8/20 0.57
KMT2A Q03164 6/20 0.57
MEN1 O00255 5/20 0.57
MAPT P10636 3/20 0.57
HSD17B10 Q99714 3/20 0.57
SMN1; SMN2 Q16637 2/20 0.57
JAK2 O60674 1/20 0.57
USP2 O75604 1/20 0.57
ALOX15 P16050 1/20 0.57
NPSR1 Q6W5P4 1/20 0.57
POLB P06746 2/20 0.54
ELANE P08246 1/20 0.41
ALDH1A1 P00352 2/20 0.40
PGR P06401 1/20 0.39
PTGS1 P23219 1/20 0.39
MAPK1 P28482 1/20 0.39
THRB P10828 1/20 0.38
KDM4E B2RXH2 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10870084 0.91 ELANE (0.47) ESR1ESR2GAAKMT2AMEN1
SCHEMBL30226566 0.90 ESR1 (0.49) ESR1ESR2GAAKMT2AMEN1
SCHEMBL4824369 0.90 ESR1 (0.49) ESR1ESR2GAAKMT2AMEN1
SCHEMBL14973546 0.87 ELANE (0.45) ESR1ESR2GAAKMT2AMEN1
SCHEMBL13588210 0.86 HTT (0.47) ESR1ESR2GAAKMT2AMEN1
SCHEMBL11963911 0.85 ESR1 (0.47) ESR1ESR2GAAKMT2AMEN1
SCHEMBL92351 0.85 ESR1 (0.42) ESR1ESR2GAAKMT2AMEN1
SCHEMBL217074 0.85 ESR1 (0.46) ESR1ESR2GAAKMT2AMEN1
SCHEMBL10040393 0.84 ESR1 (0.43) ESR1ESR2GAAKMT2AMEN1
SCHEMBL4823898 0.84 ESR1 (0.44) ESR1ESR2GAAKMT2AMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 361 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7439302-B2 Low refractive index polymers as underlayers for silicon-containing photoresists INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-10-21 US claimed
US-20240027908-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-01-25 US disclosed
US-20240027908-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-01-25 US disclosed
US-11801333-B2 Bio-electrode composition, bio-electrode, and method for manufacturing a bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-31 US disclosed
US-11801333-B2 Bio-electrode composition, bio-electrode, and method for manufacturing a bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-31 US disclosed
US-11786160-B2 Bio-electrode composition, bio-electrode, and method for manufacturing bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-17 US disclosed
US-11786160-B2 Bio-electrode composition, bio-electrode, and method for manufacturing bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-17 US disclosed
WO-2023140191-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2023-07-27 WO disclosed
EP-2384457-B1 COATING COMPOSITIONS MERCK PATENT GMBH (DE) 2022-07-06 EP disclosed
US-11071485-B2 Bio-electrode composition, bio-electrode, and method for manufacturing bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-07-27 US disclosed
US-7183036-B2 Low activation energy positive resist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-02-27 US disclosed
US-7129016-B2 Positive resist containing naphthol functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-10-31 US disclosed
WO-2006096221-A1 LOW REFRACTIVE INDEX POLYMERS AS UNDERLAYERS FOR SILICON-CONTAINING PHOTORESISTS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-09-14 WO disclosed
US-20060134547-A1 Low refractive index polymers as underlayers for silicon-containing photoresists GLOBALFOUNDRIES U.S. INC. 2006-06-22 US disclosed
US-20060134546-A1 Low refractive index polymers as underlayers for silicon-containing photoresists INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-06-22 US disclosed
CN-1790163-A Positive resist containing naphthol functionality IBM (US) 2006-06-21 CN disclosed
US-20060105267-A1 Positive resist containing naphthol functionality INTERNATIONAL BUSINESS MACHINES CORPORATION 2006-05-18 US disclosed
US-20060105266-A1 Low activation energy positive resist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-05-18 US disclosed
US-20040102601-A1 Useful as overcoating materials and interlayer insulating materials for wiring boards SANYO CHEMICAL INDUSTRIES, LTD. (JP) 2004-05-27 US disclosed
EP-1375553-A1 CURABLE RESIN, CURABLE RESIN MATERIAL, CURABLE FILM, AND INSULATOR SANYO CHEMICAL INDUSTRIES, LTD. (JP) 2004-01-02 EP disclosed