⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrazine SCHEMBL9443194 | 0.82 | — | — | |
| Hydrazine SCHEMBL8141972 | 0.82 | — | — | |
| Hydrazine SCHEMBL239 | 0.82 | — | — | |
| Hydrazine SCHEMBL2463370 | 0.82 | — | — | |
| Hydrazine SCHEMBL8158007 | 0.82 | — | — | |
| Hydrazine SCHEMBL16089343 | 0.82 | — | — | |
| Hydrazine SCHEMBL23797207 | 0.67 | — | — | |
| Hydrazine SCHEMBL3048264 | 0.67 | — | — | |
| Hydrazine SCHEMBL8048995 | 0.67 | — | — | |
| Hydrazine SCHEMBL8999263 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6596888-B2 | Employed to form diffusion barrier layers on microelectronic devices via vapor deposition. | UNIVERSITY OF FLORIDA | 2003-07-22 | — | — | US | claimed |
| US-20020045343-A1 | MOCVD of WNx thin films using imido precursors | NAVY, SECRETARY OF THE UNITED STATES OF AMERICA OFFICE OF NAVAL RESEARCH | 2002-04-18 | — | — | US | claimed |
| US-8697561-B2 | Microelectronic structure by selective deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-04-15 | — | — | US | disclosed |
| US-20120142182-A1 | MICROELECTRONIC STRUCTURE BY SELECTIVE DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-06-07 | — | — | US | disclosed |
| US-8138100-B2 | Microelectronic structure by selective deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-03-20 | — | — | US | disclosed |
| US-7816743-B2 | Microelectronic structure by selective deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-10-19 | — | — | US | disclosed |
| US-7510939-B2 | Microelectronic structure by selective deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-03-31 | — | — | US | disclosed |
| US-20090075439-A1 | MICROELECTRONIC STRUCTURE BY SELECTIVE DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-03-19 | — | — | US | disclosed |
| US-20090072317-A1 | MICROELECTRONIC STRUCTURE BY SELECTIVE DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-03-19 | — | — | US | disclosed |
| US-20080001225-A1 | MICROELECTRONIC STRUCTURE BY SELECTIVE DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-01-03 | — | — | US | disclosed |
| US-6596888-B2 | Employed to form diffusion barrier layers on microelectronic devices via vapor deposition. | UNIVERSITY OF FLORIDA | 2003-07-22 | — | — | US | disclosed |
| US-6596888-B2 | Employed to form diffusion barrier layers on microelectronic devices via vapor deposition. | UNIVERSITY OF FLORIDA | 2003-07-22 | — | — | US | disclosed |
| US-20020045343-A1 | MOCVD of WNx thin films using imido precursors | NAVY, SECRETARY OF THE UNITED STATES OF AMERICA OFFICE OF NAVAL RESEARCH | 2002-04-18 | — | — | US | disclosed |
| US-20020045343-A1 | MOCVD of WNx thin films using imido precursors | NAVY, SECRETARY OF THE UNITED STATES OF AMERICA OFFICE OF NAVAL RESEARCH | 2002-04-18 | — | — | US | disclosed |