SCHEMBL735641

SCHEMBL735641

CC(C)C1=C([Mg]C2=C(C(C)C)C=CC2)CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7723431 0.85
SCHEMBL9750871 0.71
SCHEMBL714797 0.70
SCHEMBL7923511 0.70
SCHEMBL9224200 0.68
SCHEMBL10390106 0.68
SCHEMBL10390244 0.68
SCHEMBL2426984 0.68
SCHEMBL10390027 0.68
Hydrochloric Acid SCHEMBL7918834 0.68

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8962893-B2 Organometallic compound purification ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-02-24 US claimed
EP-0806495-B1 Metal-organic chemical vapor-phase deposition process SONY CORP (JP) 2002-09-11 EP claimed
EP-0656431-B1 Metal-organic chemical vapor-phase deposition process SONY CORP (JP) 1999-07-21 EP claimed
EP-0806495-A2 Metal-organic chemical vapor-phase deposition process SONY CORPORATION (JP) 1997-11-12 EP claimed
US-5433170-A Metal-organic chemical vapor-phase deposition process for fabricating light-emitting devices SONY CORPORATION (JP) 1995-07-18 US claimed
EP-0656431-A2 Metal-organic chemical vapor-phase deposition process SONY CORPORATION (JP) 1995-06-07 EP claimed
JP-7074108-A None JP disclosed
EP-2570512-B1 Thin film processing equipment and the processing method thereof KERN ENERGY ENTPR CO LTD (TW) 2016-05-04 EP disclosed
US-8962893-B2 Organometallic compound purification ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-02-24 US disclosed
US-20140061956-A1 ORGANOMETALLIC COMPOUND PURIFICATION ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-03-06 US disclosed
US-8409893-B2 Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing SONY CORPORATION (JP) 2013-04-02 US disclosed
US-20130071567-A1 Thin film processing equipment and the processing method thereof KERN ENERGY ENTERPRISE CO., LTD. (TW) 2013-03-21 US disclosed
US-20130072000-A1 Thin film processing equipment and the processing method thereof YOSHIMURA, TOSHIAKU (JP) 2013-03-21 US disclosed
EP-0806495-A2 Metal-organic chemical vapor-phase deposition process SONY CORPORATION (JP) 1997-11-12 EP disclosed
US-5433170-A Metal-organic chemical vapor-phase deposition process for fabricating light-emitting devices SONY CORPORATION (JP) 1995-07-18 US disclosed
EP-0656431-A2 Metal-organic chemical vapor-phase deposition process SONY CORPORATION (JP) 1995-06-07 EP disclosed
JP-H0774108-A VAPOR PHASE EPITAXY AND MAGNESIUM MATERIAL THEREFOR MITSUBISHI CABLE IND LTD 1995-03-17 JP disclosed
US-5079184-A METHOD OF MANUFACTURING III-IV GROUP COMPOUND SEMICONDUCTOR DEVICE KABUSHIKI KAISHA TOSHIBA (JP) 1992-01-07 US disclosed
US-4927670-A ALKYLCYCLOPENTADIENYL METAL COMPOUND GEORGIA TECH RESEARCH CORPORATION (US) 1990-05-22 US disclosed
US-4915988-A Chemical vapor deposition of group IIA metals and precursors therefor GEORGIA TECH RESEARCH CORPORATION (US) 1990-04-10 US disclosed