⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride Ion SCHEMBL28044912 | 0.82 | — | — | |
| Fluoride Ion SCHEMBL22554800 | 0.82 | CA4 (0.33) | — | |
| Fluoride Ion SCHEMBL8089966 | 0.82 | — | — | |
| SCHEMBL27427293 | 0.71 | — | — | |
| SCHEMBL29889134 | 0.71 | — | — | |
| Fluoride Ion SCHEMBL23200395 | 0.71 | — | — | |
| SCHEMBL6559802 | 0.71 | — | — | |
| Fluoride Ion SCHEMBL21829535 | 0.50 | — | — | |
| Fluoride Ion SCHEMBL24361 | 0.50 | — | — | |
| Fluoride Ion SCHEMBL22981870 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2618 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12618154-B2 | Selective non-plasma deposition of mask protection material | TOKYO ELECTRON LIMITED (JP) | 2026-05-05 | — | — | US | claimed |
| US-20260068643-A1 | SEMICONDUCTOR DEVICE AND METHODS OF FORMATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-03-05 | — | — | US | claimed |
| US-12520554-B2 | Area-selective removal and selective metal cap | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-06 | — | — | US | claimed |
| US-20260005145-A1 | MEMORY DEVICE INCLUDING CONTROL GATES HAVING TUNGSTEN STRUCTURE | MICRON TECHNOLOGY INC (US) | 2026-01-01 | — | — | US | claimed |
| US-20250366121-A1 | AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-27 | — | — | US | claimed |
| US-20250357129-A1 | FLUORINE INCORPORATION METHOD FOR NANOSHEET | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| US-20250357117-A1 | DOPED TUNGSTEN CARBIDE LOW-K ETCH HARD MASK | APPLIED MATERIALS INC (US) | 2025-11-20 | — | — | US | claimed |
| US-20250349545-A1 | VOLUME-LESS FLUORINE INCORPORATION METHOD | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | claimed |
| US-20250300015-A1 | SELECTIVE TUNGSTEN NAND DEEP CONTACT GAP BOTTOM FILL | APPLIED MATERIALS, INC. | 2025-09-25 | — | — | US | claimed |
| US-20250293041-A1 | CYCLIC ETCH/DEPOSITION PLASMA PROCESSES USING TUNGSTEN BASED PRECURSOR GAS | TOKYO ELECTRON LIMITED (JP) | 2025-09-18 | — | — | US | claimed |
| US-5162246-A | Shallow source and drain junction | NORTH CAROLINA STATE UNIVERSITY (US) | 1992-11-10 | — | — | US | claimed |
| CN-1058298-A | A kind of silicon film capacitor pressure sensor and manufacture method thereof | TU XIANGZHENG (CN) | 1992-01-29 | — | — | CN | claimed |
| US-5069749-A | Method of fabricating interconnect layers on an integrated circuit chip using seed-grown conductors | DIGITAL EQUIPMENT CORPORATION (US) | 1991-12-03 | — | — | US | claimed |
| US-4923715-A | Method of forming thin film by chemical vapor deposition | KABUSHIKI KAISHA TOSHIBA (JP) | 1990-05-08 | — | — | US | claimed |
| US-4894256-A | VAPOR DEPOSITION, PLASMA RESISTANCE | U.S. PHILIPS CORPORATION (US) | 1990-01-16 | — | — | US | claimed |
| EP-0256917-A1 | Method of producing interconnection layers using CVD of metal | DIGITAL EQUIPMENT CORPORATION (US) | 1988-02-24 | — | — | EP | claimed |
| EP-0134571-B1 | INTEGRATED SEMICONDUCTOR CIRCUIT HAVING AN ALUMINIUM OR ALUMINIUM ALLOY MULTILAYER WIRING, AND METHOD FOR ITS MANUFACTURE | SIEMENS AKTIENGESELLSCHAFT (DE) | 1988-01-07 | — | — | EP | claimed |
| US-4670614-A | HIGH OCTANE GASOLINE | RESEARCH ASSOCIATION FOR PETROLEUM ALTERNATIVE DEVELOPMENT (JP) | 1987-06-02 | — | — | US | claimed |
| US-4519785-A | Life tungsten filament for incandescent lamp | GTE PRODUCTS CORPORATION (US) | 1985-05-28 | — | — | US | claimed |
| EP-0092109-A2 | Method for increasing the life of a tungsten filament for an incandescent lamp | GTE Products Corporation (US) | 1983-10-26 | — | — | EP | claimed |