SCHEMBL736161

SCHEMBL736161

[In].[O-2].[O-2].[Sn+4].[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5400869 0.89
SCHEMBL5400893 0.89
SCHEMBL3124776 0.89
SCHEMBL7558679 0.87
SCHEMBL5411661 0.82
SCHEMBL5400427 0.82
SCHEMBL5402889 0.82
SCHEMBL5411621 0.75
SCHEMBL11969204 0.75
SCHEMBL16848300 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080024055-A1 Transparent conducting oxide thin films and related devices NATIONAL SCIENCE FOUNDATION 2008-01-31 US claimed
US-7242039-B2 Semiconductor device HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) 2007-07-10 US claimed
US-20050199880-A1 Semiconductor device HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 2005-09-15 US claimed
US-6480633-B1 Electro-optic device including a buffer layer of transparent conductive material AGERE SYSTEMS INC. 2002-11-12 US claimed
US-20250351704-A1 DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME SAMSUNG DISPLAY CO LTD (KR) 2025-11-13 US disclosed
US-20250275154-A1 VERTICAL RESISTIVE MEMORY DEVICE AND RELATED METHOD TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-08-28 US disclosed
US-20250261379-A1 VERTICAL PHASE CHANGE MEMORY DEVICE AND RELATED METHOD TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-08-14 US disclosed
US-20250255143-A1 DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME SAMSUNG DISPLAY CO., LTD. (KR) 2025-08-07 US disclosed
EP-4598318-A1 DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME Samsung Display Co., Ltd. (KR) 2025-08-06 EP disclosed
US-20250234712-A1 DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME SAMSUNG DISPLAY CO., LTD. (KR) 2025-07-17 US disclosed
US-10927470-B2 Apparatus for fabricating electrode structure ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) 2021-02-23 US disclosed
US-20200335454-A1 RADIATION-RESISTANT METAL OXIDE SEMICONDUCTOR COMPOSITION CONTAINING ZINC-INDIUM-TIN OXIDE, AND PREPARATION METHOD AND USE THEREOF CHUNG ANG UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION (KR) 2020-10-22 US disclosed
US-10023797-B2 Liquid composition for etching oxides comprising indium, zinc, tin, and oxygen and etching method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-07-17 US disclosed
US-20160348001-A1 LIQUID COMPOSITION FOR ETCHING OXIDES COMPRISING INDIUM, ZINC, TIN, AND OXYGEN AND ETCHING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2016-12-01 US disclosed
US-8138364-B2 Transparent conducting oxide thin films and related devices NORTHWESTERN UNIVERSITY (US) 2012-03-20 US disclosed
US-20080024055-A1 Transparent conducting oxide thin films and related devices NATIONAL SCIENCE FOUNDATION 2008-01-31 US disclosed
US-20030118865-A1 High work function transparent conducting oxides as anodes for organic light-emitting diodes NATIONAL SCIENCE FOUNDATION 2003-06-26 US disclosed
WO-2003019598-A1 HIGH WORK FUNCTION TRANSPARENT CONDUCTING OXIDES AS ANODES FOR ORGANIC LIGHT-EMITTING DIODES NORTHWESTERN UNIVERSITY (US) 2003-03-06 WO disclosed
US-6480633-B1 Electro-optic device including a buffer layer of transparent conductive material AGERE SYSTEMS INC. 2002-11-12 US disclosed
US-6480633-B1 Electro-optic device including a buffer layer of transparent conductive material AGERE SYSTEMS INC. 2002-11-12 US disclosed