SCHEMBL742350

SCHEMBL742350

CC(C(=O)OCC(CO)c1ccccc1)C(=O)OCC(CO)c1ccccc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ CYP1A2 P05177 1/20 0.54
▸ CYP2D6 P10635 1/20 0.54
▸ PKM P14618 1/20 0.54
▸ SMN1; SMN2 Q16637 1/20 0.54
▸ NPSR1 Q6W5P4 1/20 0.54
▸ PRKCA P17252 2/20 0.49
▸ PRKCD Q05655 2/20 0.49
▸ KMT2A Q03164 1/20 0.42
▸ TRPA1 O75762 2/20 0.41
▸ ADRA2A P08913 1/20 0.40
▸ ADRA2C P18825 1/20 0.40
▸ LMNA P02545 1/20 0.40
▸ HIF1A Q16665 1/20 0.40
▸ KDM4E B2RXH2 1/20 0.40
▸ ALDH1A1 P00352 3/20 0.40
▸ TSHR P16473 1/20 0.40
▸ GABBR2 O75899 1/20 0.40
▸ GABBR1 Q9UBS5 1/20 0.40
▸ CHRM2 P08172 1/20 0.38
▸ CHRM4 P08173 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18006556 0.93 CYP2D6 (0.51) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1
SCHEMBL2705027 0.84 CYP1A2 (0.56) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1
SCHEMBL2705028 0.84 CYP1A2 (0.56) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1
SCHEMBL8103307 0.84 CYP1A2 (0.56) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1
SCHEMBL8089944 0.81 CYP1A2 (0.83) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1
SCHEMBL7775772 0.81 CYP1A2 (0.83) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1
SCHEMBL742603 0.81 CYP1A2 (0.56) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1
SCHEMBL23303256 0.80 CYP1A2 (0.51) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1
Carbamic Acid SCHEMBL8392185 0.80 CYP1A2 (0.60) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1
SCHEMBL7679725 0.80 CYP1A2 (0.51) CYP1A2CYP2D6PKMSMN1; SMN2NPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107210197-B Hybrid topography and chemical pre-patterning for directed self-assembly of block copolymers 国际商业机器公司 2020-06-19 — — CN disclosed
US-10600680-B2 Chemoepitaxy etch trim using a self aligned hard mask for metal line to via INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-03-24 — — US disclosed
US-10256139-B2 Chemoepitaxy etch trim using a self aligned hard mask for metal line to via INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2019-04-09 — — US disclosed
US-20190043754-A1 CHEMOEPITAXY ETCH TRIM USING A SELF ALIGNED HARD MASK FOR METAL LINE TO VIA INTERNATIONAL BUSINESS MACHINES CORPORATION 2019-02-07 — — US disclosed
US-10118989-B2 Methods of forming block polymers for directed self-assembly INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2018-11-06 — — US disclosed
US-10066040-B2 Additives for orientation control of block copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2018-09-04 — — US disclosed
US-10059820-B2 Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2018-08-28 — — US disclosed
US-10040879-B2 Fluoro-alcohol additives for orientation control of block copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2018-08-07 — — US disclosed
US-9982097-B2 Thin film self assembly of topcoat-free silicon-containing diblock copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2018-05-29 — — US disclosed
US-9879152-B2 Block copolymers for directed self-assembly applications INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2018-01-30 — — US disclosed
US-8652762-B2 Organic graded spin on BARC compositions for high NA lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-02-18 — — US disclosed
US-8623458-B2 Methods of directed self-assembly, and layered structures formed therefrom INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-01-07 — — US disclosed
US-20120205787-A1 ORGANIC GRADED SPIN ON BARC COMPOSITIONS FOR HIGH NA LITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-08-16 — — US disclosed
US-8137874-B2 Organic graded spin on BARC compositions for high NA lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-03-20 — — US disclosed
WO-2011080016-A2 METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-07-07 — — WO disclosed
US-20110147983-A1 METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM GLOBALFOUNDRIES U.S. INC. 2011-06-23 — — US disclosed
US-20110147985-A1 METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM INTERNATIONAL BUSINESS MACHINES CORPORATION 2011-06-23 — — US disclosed
US-20110147984-A1 METHODS OF DIRECTED SELF-ASSEMBLY, AND LAYERED STRUCTURES FORMED THEREFROM GLOBALFOUNDRIES U.S. INC. 2011-06-23 — — US disclosed
WO-2011073013-A1 METHODS OF DIRECTED SELF-ASSEMBLY WITH 193 - NM IMMERSION LITHOGRAPHY AND LAYERED STRUCTURES FORMED THEREFROM INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-06-23 — — WO disclosed
US-20090186294-A1 ORGANIC GRADED SPIN ON BARC COMPOSITIONS FOR HIGH NA LITHOGRAPHY IBM (US) 2009-07-23 — — US disclosed
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