⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL41912 | 0.82 | — | — | |
| SCHEMBL18886767 | 0.82 | — | — | |
| SCHEMBL16037 | 0.82 | — | — | |
| SCHEMBL7973038 | 0.82 | — | — | |
| SCHEMBL4865213 | 0.82 | — | — | |
| SCHEMBL8849452 | 0.82 | — | — | |
| SCHEMBL10578755 | 0.82 | — | — | |
| SCHEMBL2886285 | 0.67 | — | — | |
| Water SCHEMBL1263931 | 0.67 | — | — | |
| SCHEMBL571254 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9882113-B1 | Gallium beam lithography for superconductive structure formation | NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC (US) | 2018-01-30 | — | — | US | claimed |
| US-9030862-B2 | Resistive-switching nonvolatile memory elements | INTERMOLECULAR, INC. (US) | 2015-05-12 | — | — | US | claimed |
| US-20150034896-A1 | Resistive-Switching Nonvolatile Memory Elements | INTERMOLECULAR INC (US) | 2015-02-05 | — | — | US | claimed |
| US-8873276-B2 | Resistive-switching nonvolatile memory elements | INTERMOLECULAR, INC. (US) | 2014-10-28 | — | — | US | claimed |
| US-20140042384-A1 | Resistive-Switching Nonvolatile Memory Elements | INTERMOLECULAR INC. (US) | 2014-02-13 | — | — | US | claimed |
| US-8599603-B2 | Resistive-switching nonvolatile memory elements | INTERMOLECULAR, INC. (US) | 2013-12-03 | — | — | US | claimed |
| US-20130217200-A1 | Resistive-Switching Nonvolatile Memory Elements | INTERMOLECULAR INC. (US) | 2013-08-22 | — | — | US | claimed |
| CN-110438442-B | Nano niobium aluminum yttrium nitride/amorphous silicon nitride biphase superhard coating and deposition method thereof | 江西科技师范大学 | 2021-07-23 | — | — | CN | disclosed |
| US-9882113-B1 | Gallium beam lithography for superconductive structure formation | NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC (US) | 2018-01-30 | — | — | US | disclosed |
| US-20020125573-A1 | Ferroelectric integrated circuit having hydrogen barrier layer | SYMETRIX CORPORATION | 2002-09-12 | — | — | US | disclosed |
| US-20020125573-A1 | Ferroelectric integrated circuit having hydrogen barrier layer | SYMETRIX CORPORATION | 2002-09-12 | — | — | US | disclosed |
| US-6365927-B1 | Ferroelectric integrated circuit having hydrogen barrier layer | SYMETRIX CORPORATION | 2002-04-02 | — | — | US | disclosed |
| US-6365927-B1 | Ferroelectric integrated circuit having hydrogen barrier layer | SYMETRIX CORPORATION | 2002-04-02 | — | — | US | disclosed |
| WO-2001075945-A3 | FERROELECTRIC INTEGRATED CIRCUIT HAVING HYDROGEN BARRIER LAYER | SYMETRIX CORP (US) | 2002-01-31 | — | — | WO | disclosed |
| WO-2001075945-A2 | FERROELECTRIC INTEGRATED CIRCUIT HAVING HYDROGEN BARRIER LAYER | SYMETRIX CORPORATION (US) | 2001-10-11 | — | — | WO | disclosed |
| WO-2001075945-A2 | FERROELECTRIC INTEGRATED CIRCUIT HAVING HYDROGEN BARRIER LAYER | SYMETRIX CORPORATION (US) | 2001-10-11 | — | — | WO | disclosed |