SCHEMBL7589848

SCHEMBL7589848

F[CH][C](F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2127951 0.67
SCHEMBL1150272 0.67
SCHEMBL15899371 0.67
SCHEMBL775798 0.67
SCHEMBL1951298 0.67
SCHEMBL774934 0.64
SCHEMBL776121 0.64
SCHEMBL775712 0.64
SCHEMBL776120 0.64
SCHEMBL20207 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3194401-A1 SOLID FORMS OF A TOLL-LIKE RECEPTOR MODULATOR Gilead Sciences, Inc. (US) 2017-07-26 EP claimed
WO-2016044182-A1 SOLID FORMS OF A TOLL-LIKE RECEPTOR MODULATOR GILEAD SCIENCES, INC. (US) 2016-03-24 WO claimed
US-11592746-B2 Radiation-sensitive resin composition, resist pattern-forming method, compound and method of generating acid JSR CORPORATION (JP) 2023-02-28 US disclosed
US-20200341376-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND AND METHOD OF GENERATING ACID JSR CORPORATION (JP) 2020-10-29 US disclosed
US-20200117087-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2020-04-16 US disclosed
EP-3347362-A1 PROCESS FOR PREPARING CEFTOLOZANE FROM 7-AMINOCEPHALOSPORANIC ACID (7-ACA) Sandoz AG (CH) 2018-07-18 EP disclosed
WO-2017042188-A1 PROCESS FOR PREPARING CEFTOLOZANE FROM 7-AMINOCEPHALOSPORANIC ACID (7-ACA) SANDOZ AG (CH) 2017-03-16 WO disclosed
US-9354523-B2 Composition for resist pattern-refinement, and fine pattern-forming method JSR CORPORATION (JP) 2016-05-31 US disclosed
US-20160011513-A1 COMPOSITION FOR FORMING FINE RESIST PATTERN, AND FINE PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-01-14 US disclosed
US-8889335-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-11-18 US disclosed
US-20130183624-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-07-18 US disclosed
WO-2011149836-A1 TEXTILE-TEMPLATED ELECTROSPUN ANISOTROPIC SCAFFOLDS FOR TISSUE ENGINEERING AND REGENERATIVE MEDICINE DREXEL UNIVERSITY (US) 2011-12-01 WO disclosed
EP-1244727-A1 MONOHYDRIC POLYFLUOROOXETANE OLIGOMERS, POLYMERS, AND COPOLYMERS AND COATINGS CONTAINING THE SAME OMNOVA SOLUTIONS INC. (US) 2002-10-02 EP disclosed
WO-2001048051-A1 MONOHYDRIC POLYFLUOROOXETANE OLIGOMERS, POLYMERS, AND COPOLYMERS AND COATINGS CONTAINING THE SAME OMNOVA SOLUTIONS, INC. (US) 2001-07-05 WO disclosed
EP-0258160-A2 2,3-Dihydrofuran derivatives, process for their preparation, their use as intermediate in the preparation of tetrahydrofuran RHONE-POULENC AGROCHIMIE (FR) 1988-03-02 EP disclosed