⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL166505 | 0.82 | — | — | |
| SCHEMBL20242253 | 0.82 | — | — | |
| SCHEMBL9436451 | 0.82 | — | — | |
| SCHEMBL29163644 | 0.82 | — | — | |
| SCHEMBL23051669 | 0.67 | — | — | |
| SCHEMBL7862270 | 0.67 | — | — | |
| SCHEMBL928925 | 0.67 | — | — | |
| SCHEMBL9331661 | 0.67 | — | — | |
| Fluoride SCHEMBL8615884 | 0.67 | — | — | |
| SCHEMBL25411922 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6440801-B1 | Structure for folded architecture pillar memory cell | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-08-27 | — | — | US | disclosed |
| US-6114725-A | Structure for folded architecture pillar memory cell | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-09-05 | — | — | US | disclosed |
| US-6077745-A | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-06-20 | — | — | US | disclosed |
| US-6034389-A | Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-03-07 | — | — | US | disclosed |
| US-6033957-A | 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-03-07 | — | — | US | disclosed |
| US-6013548-A | Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-01-11 | — | — | US | disclosed |
| US-5990509-A | 2F-square memory cell for gigabit memory applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-11-23 | — | — | US | disclosed |
| US-5929477-A | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-07-27 | — | — | US | disclosed |
| US-5874760-A | 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-02-23 | — | — | US | disclosed |