SCHEMBL7697889

SCHEMBL7697889

CCC(O)CC(O)C(F)(F)F

nearest known ligand 0.43

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
CETP P11597 1/20 0.43
TSHR P16473 2/20 0.39
PKM P14618 1/20 0.36
GAA P10253 1/20 0.31
LMNA P02545 1/20 0.30
HTT P42858 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL27806815 0.97 CETP (0.42) CETPTSHRPKM
SCHEMBL9292442 0.82 CETP (0.39) CETPPKM
SCHEMBL7525822 0.81 CETP (0.42) CETPTSHRPKM
SCHEMBL7525824 0.81 CETP (0.42) CETPTSHRPKM
SCHEMBL765946 0.79
SCHEMBL7312976 0.79
SCHEMBL469203 0.79
SCHEMBL15354749 0.79 CETP (0.40) CETPTSHRPKM
SCHEMBL15354728 0.79 CETP (0.40) CETPTSHRPKM
SCHEMBL9292079 0.79 TSHR (0.36) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0454843-A4 METHOD AND APPARATUS FOR THE RAPID DEPOSITION BY CHEMICAL VAPOR DEPOSITION WITH LOW VAPOR PRESSURE REACTANTS GEORGIA TECH RES INST (US) 1994-12-28 EP claimed
EP-0454843-A1 METHOD AND APPARATUS FOR THE RAPID DEPOSITION BY CHEMICAL VAPOR DEPOSITION WITH LOW VAPOR PRESSURE REACTANTS GEORGIA TECH RESEARCH CORPORATION (US) 1991-11-06 EP claimed
WO-1991007236-A1 METHOD AND APPARATUS FOR THE RAPID DEPOSITION BY CHEMICAL VAPOR DEPOSITION WITH LOW VAPOR PRESSURE REACTANTS GEORGIA TECH RESEARCH CORPORATION (US) 1991-05-30 WO claimed
US-6337148-B1 USEFUL IN LIQUID DELIVERY CHEMICAL VAOPR DEPOSITION FOR FORMING A COPPER-CONTAINING MATERIAL ON A SUBSTRATE; FOR METALLIZATION OF INTERCONNECTIONS IN SEMICONDUCTOR DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. 2002-01-08 US disclosed